1H7 datasheet, PDF - EEWORLD Datasheet

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1H7: Description1 A, 800 V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size28KB，2 Pages; ManufacturerRectron Semiconductor; Websitehttp://www.rectron.com/; Environmental Compliance

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1H7 Overview

1 A, 800 V, SILICON, SIGNAL DIODE

1H7 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rectron Semiconductor
package instruction	O-PALF-W2
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	HIGH RELIABILITY, LOW POWER LOSS
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Maximum non-repetitive peak forward current	25 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	265
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
Maximum reverse recovery time	0.075 µs
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

1H1

THRU

1H8

HIGH EFFICIENCY RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere

FEATURES

Low power loss, high efficiency

Low leakage

Low forward voltage

High current capability

High speed switching

High surge capability

High reliability

R-1

MECHANICAL DATA

Case: Molded plastic

Epoxy: Device has UL flammability classification 94V-O

Lead: MIL-STD-202E method 208C guaranteed

Mounting position: Any

Weight: 0.12 gram

.787 (20.0)

MIN.

.025 (0.65)

DIA.

.021 (0.55)

.126 (3.2)

.106 (2.7)

.102 (2.6)

DIA.

.091 (2.3)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

.787 (20.0)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS

(At T

= 25

C unless otherwise noted)

RATINGS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

at T

= 25 C

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

SYMBOL

RRM

RMS

FSM

, T

STG

-65 to + 150

1H1

1H2

100

1H3

200

140

200

1H4

300

210

300

1H5

400

280

400

1.0

1H5P

400

280

400

1H6

600

420

600

1H7

800

560

800

1H8

1000

700

1000

UNITS

Volts

Amps

ELECTRICAL CHARACTERISTICS

(At T

= 25 C unless otherwise noted)

CHARACTERISTICS

Maximum Instantaneous Forward Voltage at 1.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage T

= 25

Maximum Full Load Reverse Current

Average, Full Cycle .375” (9.5mm) lead length at T

= 55

Maximum Reverse Recovery Time (Note 1)

NOTES : 1. Test Conditions: I

= 0.5A, I

= -1.0A, I

= -0.25A

2. Measured at 1 MH

and applied reverse voltage of 4.0 volts

SYMBOL

1H1

1H2

1.0

1H3

1H4

1.3

5.0

100

trr

uAmps

nSec

2001-5

1H5

1H5P

1.0

1H6

1H7

1.7

1H8

UNITS

Volts

uAmps

1H7 Related Products

	1H7	1H1	1H2	1H3	1H4	1H5	1H5P	1H6
Description	1 A, 800 V, SILICON, SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Rectron Semiconductor	Rectron Semiconductor	Rectron Semiconductor	Rectron Semiconductor	Rectron Semiconductor	Rectron Semiconductor	Rectron Semiconductor	Rectron Semiconductor
package instruction	O-PALF-W2	O-PALF-W2	PLASTIC, R-1, 2 PIN	O-PALF-W2	O-PALF-W2	O-PALF-W2	PLASTIC, R-1, 2 PIN	PLASTIC, R-1, 2 PIN
Contacts	2	2	2	2	2	2	2	2
Reach Compliance Code	_compli	_compli	_compli	not_compliant	_compli	_compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY	HIGH RELIABILITY, LOW POWER LOSS
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V	1 V	1 V	1 V	1.3 V	1.3 V	1 V	1.5 V
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
JESD-609 code	e3	e3	e3	e3	e3	e3	e3	e3
Maximum non-repetitive peak forward current	25 A	25 A	25 A	25 A	25 A	25 A	25 A	25 A
Number of components	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-65 °C	-55 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	265	265	265	265	265	265	265	265
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	800 V	50 V	100 V	200 V	300 V	400 V	400 V	600 V
Maximum reverse recovery time	0.075 µs	0.05 µs	0.05 µs	0.05 µs	0.05 µs	0.05 µs	0.05 µs	0.075 µs
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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