EEWORLDEEWORLDEEWORLD

Part Number

Search

1H3

Description
1 A, 200 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size28KB,2 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

1H3 Overview

1 A, 200 V, SILICON, SIGNAL DIODE

1H3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron Semiconductor
package instructionO-PALF-W2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current25 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)265
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1H1
THRU
1H8
HIGH EFFICIENCY RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
*
Low power loss, high efficiency
Low leakage
Low forward voltage
High current capability
High speed switching
High surge capability
High reliability
R-1
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.12 gram
.787 (20.0)
MIN.
.025 (0.65)
DIA.
.021 (0.55)
.126 (3.2)
.106 (2.7)
.102 (2.6)
DIA.
.091 (2.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
.787 (20.0)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
A
= 25 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
15
-65 to + 150
1H1
50
35
50
1H2
100
70
100
1H3
200
140
200
1H4
300
210
300
1H5
400
280
400
1.0
25
12
1H5P
400
280
400
1H6
600
420
600
1H7
800
560
800
1H8
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
pF
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage T
A
= 25
o
C
Maximum Full Load Reverse Current
Average, Full Cycle .375” (9.5mm) lead length at T
L
= 55
o
C
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
SYMBOL
V
F
1H1
1H2
1.0
1H3
1H4
1.3
5.0
I
R
100
trr
50
75
uAmps
nSec
2001-5
1H5
1H5P
1.0
1H6
1H7
1.7
1H8
UNITS
Volts
uAmps
o

1H3 Related Products

1H3 1H1 1H2 1H4 1H5 1H5P 1H6 1H7
Description 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Maker Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor
package instruction O-PALF-W2 O-PALF-W2 PLASTIC, R-1, 2 PIN O-PALF-W2 O-PALF-W2 PLASTIC, R-1, 2 PIN PLASTIC, R-1, 2 PIN O-PALF-W2
Contacts 2 2 2 2 2 2 2 2
Reach Compliance Code not_compliant _compli _compli _compli _compli _compli _compli _compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1.3 V 1.3 V 1 V 1.5 V 1.7 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609 code e3 e3 e3 e3 e3 e3 e3 e3
Maximum non-repetitive peak forward current 25 A 25 A 25 A 25 A 25 A 25 A 25 A 25 A
Number of components 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -65 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) 265 265 265 265 265 265 265 265
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 50 V 100 V 300 V 400 V 400 V 600 V 800 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.075 µs 0.075 µs
surface mount NO NO NO NO NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1614  2679  1257  1127  1860  33  54  26  23  38 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号