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F1T2G R0G

Description
DIODE GEN PURP 100V 1A TS-1
Categorysemiconductor    Discrete semiconductor   
File Size372KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

F1T2G R0G Overview

DIODE GEN PURP 100V 1A TS-1

F1T2G R0G Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)100V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1.3V @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)150ns
Current at different Vr - Reverse leakage current5µA @ 100V
Capacitance at different Vr, F15pF @ 4V,1MHz
Installation typeThrough hole
Package/casingT-18, axial
Supplier device packagingTS-1
Operating Temperature - Junction-55°C ~ 150°C
F1T1G thru F1T7G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Fast Recovery Rectifiers
MECHANICAL DATA
Case:
TS-1
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:
0.2g (approximately)
TS-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
T
STG
150
15
90
- 55 to +150
- 55 to +150
O
F1T
1G
50
35
50
F1T
2G
100
70
100
F1T
3G
200
140
200
F1T
4G
400
280
400
1
30
1.3
5
150
F1T
5G
600
420
600
F1T
6G
800
560
800
F1T
7G
1000
700
1000
UNIT
V
V
V
A
A
V
μA
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
250
500
ns
pF
C/W
O
O
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1505007
Version: G14
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