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SDURD540TR

Description
DIODE GEN PURP 300V DPAK
Categorysemiconductor    Discrete semiconductor   
File Size893KB,4 Pages
ManufacturerSMC
Websitehttp://www.smc-diodes.com/
Environmental Compliance
Download Datasheet Parametric View All

SDURD540TR Overview

DIODE GEN PURP 300V DPAK

SDURD540TR Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)300V
Current - average rectification (Io)-
Voltage at different If - Forward (Vf1.3V @ 5A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)45ns
Current at different Vr - Reverse leakage current30µA @ 300V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
Supplier device packagingDPAK
Operating Temperature - Junction-55°C ~ 150°C
SDURD540
Technical Data
Data Sheet N0398, Rev. A
SDURD540 ULTRAFAST RECTIFIER
Applications
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters and
motor control circuits
Rectifiers in switch mode power supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
DPAK
Circuit Diagram
Features
Ultra-Fast switching
High current capability
Low reverse leakage current
High surge current capability
This is a Pb − free device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @Tc=112°C,
rectangular wave form
8.3ms, Half Sine pulse
Max.
400
5
80
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current*
Reverse Recovery Time
* Pulse width < 300 µs, duty cycle < 2%
Symbol
V
F1
V
F2
I
R1
I
R2
t
rr
Condition
@ 5A, Pulse, T
J
= 25℃
@ 5A, Pulse, T
J
= 125℃
@V
R
= rated V
R,
T
J
= 25℃
@V
R
= rated V
R,
T
J
= 125℃
I
F
=500mA, I
R
=1A,and I
rm
=250mA
1.01
0.88
0.04
0.02
34
Typ.
Max.
1.30
1.25
30
2
45
Units
V
V
μA
mA
ns
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
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