CMUD4448 TR datasheet, PDF - EEWORLD Datasheet

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CMUD4448 TR: DescriptionDIODE GEN PURP 75V 250MA SOT523; Categorysemiconductor Discrete semiconductor; File Size473KB，3 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CMUD4448 TR Overview

DIODE GEN PURP 75V 250MA SOT523

CMUD4448 TR Parametric

Parameter Name	Attribute value
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	75V
Current - average rectification (Io)	250mA
Voltage at different If - Forward (Vf	1V @ 100mA
speed	Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)	4ns
Current at different Vr - Reverse leakage current	25nA @ 20V
Capacitance at different Vr, F	4pF @ 0V，1MHz
Installation type	surface mount
Package/casing	SC-89，SOT-490
Supplier device packaging	SOT-523
Operating Temperature - Junction	-65°C ~ 150°C

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CMUD4448

SURFACE MOUNT

HIGH SPEED

SILICON SWITCHING DIODE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMUD4448

type is an ultra-high speed silicon switching diode

manufactured by the epitaxial planar process, epoxy

molded in an ULTRAmini™ surface mount package,

designed for high speed switching applications.

MARKING CODE: DAA

SOT-523 CASE

MAXIMUM RATINGS:

(TA=25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VR

VRRM

IF

IFRM

IFSM

PD

TJ, Tstg

Θ

JA

UNITS

V

mA

A

mW

°C

°C/W

75

100

250

500

4.0

1.0

250

-65 to +150

500

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

IR

BVR

VF

CT

trr

VR=20V

IR=5.0μA

IR=100μA

IF=5.0mA

IF=100mA

VR=0, f=1.0MHz

IR=IF=10mA, Irr=1.0mA, RL=100Ω

75

100

0.62

MAX

25

UNITS

nA

V

0.72

1.0

4.0

V

pF

ns

R3 (9-February 2010)

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