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1N5475

Description
Variable Capacitance Diode, 82pF C(T), 30V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size34KB,1 Pages
ManufacturerCobham Semiconductor Solutions
Download Datasheet Parametric View All

1N5475 Overview

Variable Capacitance Diode, 82pF C(T), 30V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2

1N5475 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDO-7
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio2.9
Nominal diode capacitance82 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor225
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationABRUPT
Base Number Matches1
GENERAL PURPOSE ABRUPT VARACTOR DIODES
1N5441 TO 1N5476
PART
NUMBER
1N5441
1N5442
1N5443
1N5444
1N5445
1N5446
1N5447
1N5448
1N5449
1N5450
1N5451
1N5452
1N5453
1N5454
1N5455
1N5456
1N5461
1N5462
1N5463
1N5464
1N5465
1N5466
1N5467
1N5468
1N5469
1N5470
1N5471
1N5472
1N5473
1N5474
1N5475
1N5476
CAPACITANCE
@ 4 Vdc • 1 MHz
(pF)
6.8
8.2
10.0
12.0
15.0
18.0
20.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100.0
6.8
8.2
10.0
12.0
15.0
18.0
20.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100.0
TUNING RATIO
C•2 V / C•30V
MIN
MAX
2.5
3.1
2.5
3.1
2.6
3.1
2.6
3.1
2.6
3.1
2.6
3.1
2.6
3.1
2.6
3.2
2.6
3.2
2.6
3.2
2.6
3.2
2.6
3.2
2.6
3.3
2.7
3.3
2.7
3.3
2.7
3.3
2.7
2.8
2.8
2.8
2.8
2.9
2.9
2.9
2.9
2.9
2.9
2.9
2.9
2.9
2.9
2.9
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.2
3.2
3.2
3.2
3.2
3.3
3.3
3.3
3.3
MIN QUALITY FACTOR
Q @ - 4 Vdc
f = 50 MHz
450
450
400
400
400
350
350
350
350
350
300
250
200
175
175
175
600
600
550
550
550
500
500
500
500
500
450
400
300
250
225
200
Package style
DC Power Dissipation
Min Reverse Breakdown Voltage
Max Reverse Current (I
R
)
Max Reverse Current (I
R2
)
Temp. Coefficient of Capacitance
Operating Temperature (Topr)
Storage Temperature (Tstg)
Capacitance Tolerance
@ Ta = 25°C
@ I
R
= 10 µA
@ 25 Vdc
@ 25 Vdc 150°C
@ Vr=4 Vdc; Ta -65° to + 85°c
Standard Device
Suffix A
Suffix B
Suffix C
DO-7
400 mW
30 V
0.02 µA
20 µA
.04% /°C
-65 to +175°C
-65 to +200°C
±20%
±10%
±5%
±2%
DENOTES MILITARY APPROVAL FOR JAN - JANTX – JANTXV (B & C Tolerance only)
P.O. BOX 609
ROCKPORT, MAINE 04856
207-236-6076
FAX 207-236-9558
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