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1N250C

Description
6 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
CategoryDiscrete semiconductor    diode   
File Size151KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N250C Overview

6 A, 500 V, SILICON, RECTIFIER DIODE, DO-4

1N250C Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDO-5
package instructionO-MUPM-D1
Contacts1
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
applicationPOWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-203AB
JESD-30 codeO-MUPM-D1
JESD-609 codee0
Maximum non-repetitive peak forward current800 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output current40 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time5 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
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