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DMC505010R

Description
TRANS 2NPN 50V 0.1A SMINI6
CategoryDiscrete semiconductor    The transistor   
File Size635KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DMC505010R Overview

TRANS 2NPN 50V 0.1A SMINI6

DMC505010R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionHALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, SC-113DB, 6 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Samacsys DescriptionDMC505010R, Dual Dual Bipolar Transistor, NPN 100 mA 50 V HFE:210 150 MHz Power, 6-Pin SMini6 F3 B
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)210
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
DMC50501
Silicon NPN epitaxial planar type
For general amplification
DMC20501 in SMini6 type package
Features
High forward current transfer ratio h
FE
with excellent linearity
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: B0
Basic Part Number
Dual DSC2001 (Individual)
Packaging
DMC505010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Tr1
Tr2
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Overall
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
opr
T
stg
Rating
60
50
7
100
200
150
150
–40 to +85
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
°C
1: Emitter (Tr1)
2: Base (Tr1)
3: Base (Tr2)
Panasonic
JEITA
Code
(C1)
6
4: Collector (Tr2)
5: Emitter (Tr2)
6: Collector (Tr1)
SMini6-F3-B
SC-113DB
SOT-363
(E2)
5
(C2)
4
Tr2
Tr1
1
(E1)
2
(B1)
3
(B2)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
h
FE
ratio
*1
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
h
FE
(Small/Large)
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
I
E
= 10 µA, I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 10 V, I
B
= 0
V
CE
= 10 V, I
C
= 2 mA
V
CE
= 10 V, I
C
= 2 mA
I
C
= 100 mA, I
B
= 10 mA
V
CE
= 10 V, I
C
= 2 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
210
0.50
0.99
0.13
150
1.5
0.3
Min
60
50
7
0.1
100
460
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Ratio between 2 elements
Publication date: December 2013
Ver. DED
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