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DMA2610F0R

Description
TRANS PREBIAS DUAL PNP MINI5
CategoryDiscrete semiconductor    The transistor   
File Size552KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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TRANS PREBIAS DUAL PNP MINI5

DMA2610F0R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-G5
Reach Compliance Codeunknown
ECCN codeEAR99
Samacsys DescriptionDMA2610F0R, Dual Digital Transistor, PNP -100 mA -50 V 4.7 kΩ, Ratio Of 0.47, Common Emitter, 5-Pin Mini5 G3 B
Other featuresBUILT IN BIAS RESISITANCE RATIO 2.13
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JEDEC-95 codeMO-178AA
JESD-30 codeR-PDSO-G5
Number of components2
Number of terminals5
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
DMA2610F
Silicon PNP epitaxial planar type
For digital circuits
Features
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: R3
Basic Part Number
Dual DRA2143X (Common emitter)
Packaging
DMA2610F0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Tr1
Tr2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Overall
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
opr
T
stg
Rating
–50
–50
–100
300
150
–40 to +85
–55 to +150
Unit
V
V
mA
mW
°C
°C
°C
1: Base (Tr1)
2: Emitter (Common)
3: Base (Tr2)
Panasonic
JEITA
Code
(C1)
5
Tr1
R
2
R
1
4: Collector (Tr2)
5: Collector (Tr1)
Mini5-G3-B
SC-74A
MO-178
(C2)
4
Tr2
R
2
R
1
1
(B1)
2
(E)
3
(B2)
Resistance value
R
1
R
2
Typ
Max
4.7
10
Unit
V
V
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
FE
ratio
*1
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FE
(Small/Large)
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
V
CB
= –50 V, I
E
= 0
V
CE
= –50 V, I
B
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –10 V, I
C
= –5 mA
V
CE
= –10 V, I
C
= –5 mA
I
C
= –10 mA, I
B
= – 0.5 mA
V
CE
= – 0.2 V, I
C
= –5 mA
V
CE
= –5 V, I
C
= –100 µA
–30%
0.37
4.7
0.47
–1.7
30
0.50
0.99
Min
–50
–50
– 0.1
– 0.5
–1.0
µA
µA
mA
– 0.25
– 0.6
+30%
0.57
V
V
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Ratio between 2 elements
Publication date: September 2013
Ver. DED
1

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