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SDURD560ATR

Description
DIODE GEN PURP 600V DPAK
Categorysemiconductor    Discrete semiconductor   
File Size293KB,5 Pages
ManufacturerSMC
Websitehttp://www.smc-diodes.com/
Environmental Compliance
Download Datasheet Parametric View All

SDURD560ATR Overview

DIODE GEN PURP 600V DPAK

SDURD560ATR Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)600V
Current - average rectification (Io)-
Voltage at different If - Forward (Vf1.7V @ 5A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)35ns
Current at different Vr - Reverse leakage current5µA @ 600V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
Supplier device packagingDPAK
Operating Temperature - Junction-55°C ~ 150°C
SDURD560A
Technical Data
Data Sheet N0399 Rev. C
SDURD560A ULTRAFAST RECTIFIER
Applications
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters and
motor control circuits
Rectifiers in switch mode power supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
DPAK
Circuit Diagram
Features
Ultra-Fast switching
High current capability
Low reverse leakage current
High surge current capability
This is a Pb − free device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Maximum Ratings
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @Tc=100°C,
rectangular wave form
8.3ms, Half Sine pulse
Max.
600
5
60
Units
V
A
A
Electrical Characteristics
Characteristics
Forward Voltage Drop*
Reverse Current*
Reverse Recovery Time
* Pulse width < 300 µs, duty cycle < 2%
Symbol
V
F1
V
F2
I
R1
I
R2
t
rr
Condition
@ 5A, Pulse, T
J
= 25℃
@ 5A, Pulse, T
J
= 125C
@V
R
= rated V
R,
T
J
= 25℃
@V
R
= rated V
R,
T
J
= 125℃
I
F
=500mA, I
R
=1A,and I
rm
=250mA
1.50
1.41
0.1
52
32
Typ.
Max.
1.70
1.50
5
500
35
Units
V
V
μA
μA
ns
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

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