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BC54-10PA,115

Description
TRANS NPN 45V 1A SOT1061
CategoryDiscrete semiconductor    The transistor   
File Size2MB,22 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric Compare View All

BC54-10PA,115 Overview

TRANS NPN 45V 1A SOT1061

BC54-10PA,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
Parts packaging codeDFN
package instructionSMALL OUTLINE, S-PDSO-N3
Contacts3
Manufacturer packaging codeSOT1061
Reach Compliance Codecompliant
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)63
JESD-30 codeS-PDSO-N3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.65 W
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
VCEsat-Max0.5 V
Base Number Matches1
BCP54; BCX54; BC54PA
45 V, 1 A NPN medium power transistors
Rev. 8 — 21 October 2011
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
Nexperia
BCP54
BCX54
BC54PA
[1]
Type number
[1]
PNP complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP51
BCX51
BC51PA
SOT223
SOT89
SOT1061
Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Low-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
[1]
Pulse test: t
p
300
s; 
= 0.02.
Conditions
open base
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
[1]
[1]
[1]
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
45
1
2
250
160
250
Unit
V
A
A

BC54-10PA,115 Related Products

BC54-10PA,115 FS2DF14P3259MLF BC54PA,115 BC54-16PA,115 BCX54-10,115 P1206Y2803FBT BCP54-10,135 BCP54,135
Description TRANS NPN 45V 1A SOT1061 Cable Assembly, TRANS NPN 45V 1A SOT1061 TRANS NPN 45V 1A SOT1061 TRANS NPN 45V 1A SOT89 Fixed Resistor, Thin Film, 0.33W, 280000ohm, 200V, 1% +/-Tol, 10ppm/Cel, Surface Mount, 1206, CHIP 45 V, 1 A NPN medium power transistor SC-73 4-Pin
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
Maximum operating temperature 150 °C 70 °C 150 °C 150 °C 150 °C 155 °C 150 °C 150 °C
Minimum operating temperature -55 °C -20 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Brand Name Nexperia - Nexperia Nexperia Nexperia - Nexperia Nexperia
Parts packaging code DFN - DFN DFN SOT-89 - SC-73 SC-73
package instruction SMALL OUTLINE, S-PDSO-N3 - SMALL OUTLINE, S-PDSO-N3 SMALL OUTLINE, S-PDSO-N3 SMALL OUTLINE, R-PSSO-F3 CHIP SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 3 - 3 3 3 - 4 4
Manufacturer packaging code SOT1061 - SOT1061 SOT1061 SOT89 - SOT223 SOT223
Shell connection COLLECTOR - COLLECTOR COLLECTOR COLLECTOR - COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A - 1 A 1 A 1 A - 1 A 1 A
Collector-emitter maximum voltage 45 V - 45 V 45 V 45 V - 45 V 45 V
Configuration SINGLE - SINGLE SINGLE SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 63 - 40 100 63 - 63 40
JESD-30 code S-PDSO-N3 - S-PDSO-N3 S-PDSO-N3 R-PSSO-F3 - R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 - e3 e3 e3 - e3 e3
Humidity sensitivity level 1 - 1 1 1 - 1 1
Number of components 1 - 1 1 1 - 1 1
Number of terminals 3 - 3 3 3 2 4 4
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE - SQUARE SQUARE RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMT SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN - NPN NPN NPN - NPN NPN
Maximum power dissipation(Abs) 1.65 W - 1.65 W 1.65 W 1.35 W - 1.35 W 1.35 W
Guideline AEC-Q101; IEC-60134 - AEC-Q101; IEC-60134 AEC-Q101; IEC-60134 AEC-Q101; IEC-60134 - AEC-Q101; IEC-60134 AEC-Q101; IEC-60134
surface mount YES - YES YES YES YES YES YES
Terminal surface Tin (Sn) - Tin (Sn) Tin (Sn) Tin (Sn) - Tin (Sn) Tin (Sn)
Terminal form NO LEAD - NO LEAD NO LEAD FLAT - GULL WING GULL WING
Terminal location DUAL - DUAL DUAL SINGLE - DUAL DUAL
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON - SILICON SILICON
Nominal transition frequency (fT) 180 MHz - 180 MHz 180 MHz 180 MHz - 180 MHz 180 MHz
VCEsat-Max 0.5 V - 0.5 V 0.5 V 0.5 V - 0.5 V 0.5 V
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