
IC DRAM 256M PARALLEL 90VFBGA
| Parameter Name | Attribute value |
| memory type | Volatile |
| memory format | DRAM |
| technology | SDRAM - Mobile LPSDR |
| storage | 256Mb (8M x 32) |
| Clock frequency | 133MHz |
| Write cycle time - words, pages | 15ns |
| interview time | 5.4ns |
| memory interface | in parallel |
| Voltage - Power | 1.7 V ~ 1.95 V |
| Operating temperature | -40°C ~ 105°C(TA) |
| Installation type | surface mount |
| Package/casing | 90-VFBGA |
| Supplier device packaging | 90-VFBGA(8x13) |
| MT48H8M32LFB5-75 AT:H | MT48H16M16LFBF-6 IT:H | MT48H16M16LFBF-6:H | MT48H8M32LFB5-6 IT:H | |
|---|---|---|---|---|
| Description | IC DRAM 256M PARALLEL 90VFBGA | IC DRAM 256M PARALLEL 54VFBGA | IC DRAM 256M PARALLEL 54VFBGA | IC DRAM 256M PARALLEL 90VFBGA |
| technology | SDRAM - Mobile LPSDR | SDRAM - Mobile LPSDR | CMOS | SDRAM - Mobile LPSDR |
| memory type | Volatile | Volatile | - | Volatile |
| memory format | DRAM | DRAM | - | DRAM |
| storage | 256Mb (8M x 32) | 256Mb (16M x 16) | - | 256Mb (8M x 32) |
| Clock frequency | 133MHz | 166MHz | - | 166MHz |
| Write cycle time - words, pages | 15ns | 15ns | - | 15ns |
| interview time | 5.4ns | 5ns | - | 5ns |
| memory interface | in parallel | in parallel | - | in parallel |
| Voltage - Power | 1.7 V ~ 1.95 V | 1.7 V ~ 1.95 V | - | 1.7 V ~ 1.95 V |
| Operating temperature | -40°C ~ 105°C(TA) | -40°C ~ 85°C(TA) | - | -40°C ~ 85°C(TA) |
| Installation type | surface mount | surface mount | - | surface mount |
| Package/casing | 90-VFBGA | 54-VFBGA | - | 90-VFBGA |
| Supplier device packaging | 90-VFBGA(8x13) | 54-VFBGA(8x9) | - | 90-VFBGA(8x13) |