Product Specification
PE42641
Product Description
The PE42641 is a HaRP™-enhanced SP4T RF switch
developed on the UltraCMOS
®
process technology. This
switch contains 4 identical WEDGE/CDMA compliant TX
paths and can be used in various GSM and WCDMA
mobile applications as well as other wireless applications
up to 3000 MHz. It is also suitable for antenna band
switching and switchable matching networks for cellular
and non-cellular mobile applications. It integrates on-
board CMOS control logic with a low voltage CMOS-
compatible control interface and requires no DC blocking
capacitors. This RoHS-compliant part is available in a
standard 3
3
0.75 mm QFN package.
Peregrine’s HaRP™ technology enhancements deliver
high linearity and exceptional harmonics performance. It
is an innovative feature of the UltraCMOS
®
process,
providing performance superior to GaAs with the
economy and integration of conventional CMOS.
SP4T UltraCMOS
®
RF Switch
100 MHz – 3.0 GHz
Features
Symmetric, High-Power SP4T: All
ports WEDGE/CDMA-Compliant
Very Low Insertion Loss: 0.45 dB @
1000 MHz, 0.6 dB @ 2000 MHz
HaRP
- enhanced Technology for
Unparalleled Linearity
Low harmonics of 2f
o
= -86 dBc and
3f
o
= -81 dBc at +35 dBm
IMD3 of -110 dBm at WCDMA Band I
IIP3 of +68 dBm
TM
Very high isolation: 35 dB @ 900 MHz,
29 dB @ 1900 MHz
Exceptionally high ESD tolerance:
Class 3 (4.0 kV HBM) on ANT pin
Class 2 (2.0 kV HBM) on all pins
Accepts 1.8V and 2.75V levels
Integrated decoder for 2-pin control
Low 4.5 ohm series ON resistance
No blocking capacitors required
Figure 1. Functional Diagram
ANT
Figure 2. Package Type
16-lead 3
3 mm QFN
ESD
RF1
ESD
ESD
RF3
RF2
ESD
ESD
RF4
CMOS
Control/Driver
and ESD
V1
V2
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©2014 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 8
PE42641
Product Specification
Table 1. Electrical Specifications
Temp = 25°C, V
DD
= 2.75V
(Z
S
= Z
L
= 50
Ω
)
Parameter
Operational Frequency
ANT - RF (850 / 900 MHz)
Insertion Loss
1
(Symmetric Ports)
ANT - RF (1800 / 1900 MHz)
ANT - RF (1900 / 2200 MHz)
850 / 900 MHz
Return Loss (Active Ports)
1800 / 1900 MHz
1900 / 2100 MHz
RF - ANT (850 / 900 MHz)
Isolation
RF - ANT (1800 / 1900 MHz)
RF - ANT (1900 / 2200 MHz)
2nd Harmonic
35 dBm output power, 850 / 900 MHz
33 dBm output power, 1800 / 1900 MHz
35 dBm output power, 850 / 900 MHz
33 dBm output power, 1800 / 1900 MHz
RF Measured at 2.14 GHz at Ant port, input +20 dBm CW
signal at 1.95 GHz and -15 dBm CW signal at 1.76 GHz
(10-90%) (90-10%) RF
Condition
Min
100
-
-
-
-
-
-
31
25
23.5
Typ
0.45
0.5
0.55
25
19
18
35
29
27.5
-86
-87
-81
-80
-110
2
Max
3000
0.65
0.7
0.75
-
-
-
-
-
-
-80
-78
-73.5
-72.5
Units
MHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
dBm
3rd Harmonic
IMD3 distortion at 2.14 GHz
Switching time
5
μs
Note: 1. The typical ON Resistance value at DC is 4.5
Ω
Table 2. Electrical Specifications, Worst Case Conditions:
Temp = 85°C, V
DD
= 2.65 V
(Z
S
= Z
L
= 50
Ω
)
Parameter
Insertion loss (2.65V, 85C)
Condition
ANT - RF (850 / 900 MHz)
ANT - RF (1800 / 1900 MHz)
ANT - RF (1900 / 2200 MHz)
850 / 900 MHz
Min
-
-
-
-
-
-
30.5
24.5
23
Typ
0.5
0.55
0.6
25
19
18
34.5
28.5
27
-84
-85
-79
-78
-108
2
Max
0.7
0.75
0.8
-
-
-
-
-
-
-78
-76
-71.5
-70.5
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
dBm
Return Loss (Active Ports)
(2.65V, 85C)
1800 / 1900 MHz
1900 / 2100 MHz
RF - ANT (850 / 900 MHz)
Isolation (2.65V, 85C)
RF - ANT (1800 / 1900 MHz)
RF - ANT (1900 / 2200 MHz)
2nd Harmonic (2.65V, 85C)
35 dBm output power, 850 / 900 MHz
33 dBm output power, 1800 / 1900 MHz
35 dBm output power, 850 / 900 MHz
33 dBm output power, 1800 / 1900 MHz
RF Measured at 2.14 GHz at Ant port, input +20 dBm CW
signal at 1.95 GHz and -15 dBm CW signal at 1.76 GHz
(10-90%) (90-10%) RF
3rd Harmonic (2.65V, 85C)
IMD3 distortion at 2.14 GHz
(2.65V, 85C)
Switching time
5
μs
©2014 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 8
Document No. DOC-17914-2
│
UltraCMOS
®
RFIC Solutions
PE42641
Product Specification
Figure 3. Pin Configuration (Top View)
GND
RF2
RF1
N/C
Table 5. Absolute Maximum Ratings
Symbol
V
DD
Pin 1
Parameter/Conditions
Power supply voltage
Voltage on any DC input
Storage temperature range
RF input power (50
Ω)
4,5
824-915 MHz
RF input power (50
Ω)
4,5
1710-1910 MHz
RF input power (VSWR = (∞:1)
4,5
824-915 MHz
Min
-0.3
-0.3
-65
Max
4.0
V
DD
+ 0.3
+150
+38
Units
V
V
°C
16
14
15
13
GND
V
DD
V2
V1
1
2
3
4
12
GND
ANT
GND
GND
V
I
T
ST
Exposed
Ground
Paddle
11
10
9
P
IN
(50
Ω)
dBm
+36
+35
dBm
+33
4000
2000
V
V
5
6
GND
GND
RF4
7
RF3
8
P
IN
(∞:1)
Table 3. Pin Descriptions
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Paddle
Note:
RF input power (VSWR = (∞:1)
4,5
1710-1910 MHz
ESD Voltage, ANT pin
ESD Voltage, all pins
Pin Name
GND
V
DD
V2
V1
GND
RF4
2
Description
Ground
Supply
Switch control input, CMOS logic level
Switch control input, CMOS logic level
Ground
RF Port 4
Ground
RF Port 3
Ground
Ground
RF Common – Antenna
Ground
RF Port 1
Ground
RF Port 2
No Connect
Ground for proper device operation
V
ESD 6
Notes:
4. Assumes RF input period of 4620
μs
and duty cycle of 50%
5. V
DD
within operating range specified in
Table 4
6. ESD Voltage (HBM, MIL-STD-883 Method 3015.7)
GND
RF3
2
GND
GND
ANT
2
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be restricted to
the limits in the Operating Ranges table. Operation
between operating range maximum and absolute
maximum for extended periods may reduce reliability.
Table 6. Truth Table
Path
ANT – RF1
ANT – RF2
ANT – RF3
ANT – RF4
GND
RF1
2
GND
RF2
2
N/C
GND
V2
0
1
0
1
V1
0
0
1
1
2. Blocking capacitors needed only when non-zero DC voltage present
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS
®
device, observe the
same precautions that you would use with other ESD-
sensitive devices. Although this device contains circuitry
to protect it from damage due to ESD, precautions
should be taken to avoid exceeding the specified rating.
Table 4. Operating Ranges
Parameter
Temperature range
V
DD
Supply Voltage
I
DD
Power Supply Current
(V
DD
= 2.75V)
RF input power
3
(VSWR
≤
3:1)
824-915 MHz
RF input power
3
(VSWR
≤
3:1)
1710-1910 MHz
Control Voltage High
Control Voltage Low
Note:
Symbol Min Typ Max Units
T
OP
V
DD
I
DD
-40
2.65 2.75
13
+85
2.85
50
°C
V
µA
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS
®
devices are immune to latch-up.
+35
P
IN
+33
V
IH
V
IL
1.4
0.4
V
V
dBm
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the PE42641 in
the 16-lead 3
3 mm QFN package is MSL1.
3. Assumes RF input period of 4620
μs
and duty cycle of 50%
Document No. DOC-17914-2
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©2014 Peregrine Semiconductor Corp. All rights reserved.
Page 3 of 8
PE42641
Product Specification
Evaluation Kit
The SP4T switch EK Board was designed to
ease customer evaluation of Peregrine’s
PE42641. The RF common port is connected
through a 50
Ω
transmission line via the top SMA
connector, J1. RF1, RF2, RF3 and RF4 are
connected through 50
Ω
transmission lines via
SMA connectors J3, J5, J2 and J4, respectively.
A through 50
Ω
transmission is available via SMA
connectors J6 and J7. This transmission line can
be used to estimate the loss of the PCB over the
environmental conditions being evaluated.
The board is constructed of a four metal layer
FR4 material with a total thickness of 62 mils.
The middle layers provide ground for the
transmission lines. The transmission lines were
designed using a coplanar waveguide with
ground plane model using a trace width of
32 mils, trace gaps of 25 mils, and metal
thickness of 2.1 mils.
Figure 4. Evaluation Board Layouts
Peregrine Specification 101/0287
Figure 5. Evaluation Board Schematic
Peregrine Specification 102/0339
J1
SMASM
2
GND
ANT
GND
2
RF1
GND
RF3
14
J5
SMASM
1
15
RF2
16
GND
U1
QFN50P3X3-16P
RF2
RF4
GND
GND
7
6
5
RF4
1
J4
SMASM
GND
VDD
V2
V1
2
1
2
3
J8
HEADER14
14
12
10
8
6
4
2
14
12
10
8
6
4
2
13
11
9
7
5
3
1
13
11
9
7
VDD
5
3
V2
1
V1
C4
DNI
R2
R1
1M
1M
4
C3
DNI
C2
DNI
C1
DNI
J6
SMASM
1
2
2
13
GND
J3
SMASM
1
ANT
1
J2
SMASM
RF3
8
1
12
11
10
RF1
9
J7
SMASM
Through Line
1
2
Unlabeled
Test Line
©2014 Peregrine Semiconductor Corp. All rights reserved.
Page 4 of 8
Document No. DOC-17914-2
│
UltraCMOS
®
RFIC Solutions
2
PE42641
Product Specification
Figure 6. Insertion Loss: ANT-RF @ 25°C
Figure 7. Insertion Loss: ANT-RF @ 2.75V
Figure 8. Isolation: ANT-RF @ 25°C
Figure 9. Isolation: ANT-RF @ 2.75V
Document No. DOC-17914-2
│
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©2014 Peregrine Semiconductor Corp. All rights reserved.
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