NTMFS4826NE
Power MOSFET
Features
30 V, 66 A, Single N−Channel, SO−8FL
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Dual Sided Cooling Capability
These are Pb−Free Devices*
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V
(BR)DSS
30 V
R
DS(ON)
MAX
5.9 mW @ 10 V
8.7 mW @ 4.5 V
I
D
MAX
66 A
55 A
Applications
•
CPU Power Delivery
•
DC−DC Converters
•
High Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
v
10 sec
Power Dissipation
R
qJA,
t
v
10 sec
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
Dmaxpkg
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
15
10.8
2.16
24.3
17.5
5.67
9.5
6.9
0.87
66
47.8
41.7
132
100
−40
to
+150
41.7
6
109
W
A
A
°C
A
V/ns
mJ
W
A
W
A
W
A
Unit
V
V
A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
4826NE
AYWWG
G
D
D
D
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
ORDERING INFORMATION
Device
NTMFS4826NET1G
NTMFS4826NET3G
Package
SO−8FL
(Pb−Free)
SO−8FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V,
I
L
= 27 A
pk
, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
©
Semiconductor Components Industries, LLC, 2010
December, 2010
−
Rev. 0
1
Publication Order Number:
NTMFS4826NE/D
NTMFS4826NE
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Junction−to−Ambient
−
t
v
10 sec
Junction−to−Top
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
R
qJT
Value
3.0
57.8
143.5
22.1
9.7
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 V to
11.5 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0
W
14.4
39.8
18.6
5.2
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
1850
333
170
13.5
1.7
5.1
4.5
32
nC
20
nC
pF
g
FS
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 1.5 V, I
D
= 30 A
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
25
1
10
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±16
V
V
GS
= V
DS
, I
D
= 250
mA
1.45
1.8
4.6
4.3
4.2
6.6
6.5
62
2.5
V
mV/°C
5.9
mW
8.7
S
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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NTMFS4826NE
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.84
0.73
13.2
8.5
4.7
3.5
nC
ns
1.0
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
9.5
22
25
4.6
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
0.93
0.005
1.84
0.9
nH
W
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
130
10 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
V
GS
= 4.2 V
5.0 V
4.5 V
I
D
, DRAIN CURRENT (A)
T
J
= 25°C
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
120
110
100
90
80
70
60
50
40
30
20
10
0
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
0
1
2
3
4
5
6
V
DS
≥
10 V
I
D
, DRAIN CURRENT (A)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
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3
NTMFS4826NE
TYPICAL CHARACTERISTICS
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
ID = 30 A
T
J
= 25°C
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
V
GS
= 11.5 V
V
GS
= 4.5 V
T
J
= 25°C
2
3
4
5
6
7
8
9
10
11
15
20
25
30
35
40
45
50
55
60
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.70
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.55
1.40
1.25
1.10
0.95
0.80
0.65
0.50
−50
−25
0
25
50
75
100
125
150
10
ID = 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
2
4
6
8
10
12
14
16
18
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
2500
2250
C, CAPACITANCE (pF)
2000
1750
1500
1250
1000
750
500
250
0
0
C
oss
C
rss
5
10
15
20
25
T
J
= 25°C
C
iss
12
11
10
9
8
7
6
5
4
3
2
1
0
Q
gs
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
QT
V
DS
V
GS
16
14
12
10
8
Q
gd
ID = 30 A
T
J
= 25°C
0
5
10
15
20
25
30
6
4
2
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
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NTMFS4826NE
TYPICAL CHARACTERISTICS
1000
I
S
, SOURCE CURRENT (A)
V
DS
= 15 V
ID = 15 A
V
GS
= 11.5 V
t, TIME (ns)
100
t
d(off)
t
r
10
t
d(on)
t
f
1
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
V
GS
= 0 V
T
J
= 25°C
1
10
R
G
, GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
V
GS
= 20 V
Single Pulse
T
C
= 25°C
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
110
100
90
80
70
60
50
40
30
20
10
0
Figure 10. Diode Forward Voltage vs. Current
ID = 27 A
I
D
, DRAIN CURRENT (A)
100
10
ms
100
ms
1 ms
10 ms
dc
10
1
0.1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE(°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
120
100
80
g
FS
(S)
I
d
(A)
60
40
20
0
0
10
20
30
40
50
60 70
80
V
DS
= 1.5 V
90 100 110 120
1
0.1
10
100
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
125°C
100°C
25°C
1
10
100
1000
10,000
DRAIN CURRENT (A)
PULSE WIDTH (ms)
Figure 13. g
FS
vs. Drain Current
Figure 14. Avalanche Characteristics
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