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NTMFS4826NET3G

Description
mosfet nfetfl 30v 66a 5.9mohm
CategoryDiscrete semiconductor    The transistor   
File Size111KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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NTMFS4826NET3G Overview

mosfet nfetfl 30v 66a 5.9mohm

NTMFS4826NET3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeDFN
package instructionSMALL OUTLINE, R-PDSO-F5
Contacts8
Manufacturer packaging codeCASE 488AA-01
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)9.5 A
Maximum drain-source on-resistance0.0087 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
NTMFS4826NE
Power MOSFET
Features
30 V, 66 A, Single N−Channel, SO−8FL
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Dual Sided Cooling Capability
These are Pb−Free Devices*
http://onsemi.com
V
(BR)DSS
30 V
R
DS(ON)
MAX
5.9 mW @ 10 V
8.7 mW @ 4.5 V
I
D
MAX
66 A
55 A
Applications
CPU Power Delivery
DC−DC Converters
High Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
v
10 sec
Power Dissipation
R
qJA,
t
v
10 sec
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
Dmaxpkg
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
15
10.8
2.16
24.3
17.5
5.67
9.5
6.9
0.87
66
47.8
41.7
132
100
−40
to
+150
41.7
6
109
W
A
A
°C
A
V/ns
mJ
W
A
W
A
W
A
Unit
V
V
A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
4826NE
AYWWG
G
D
D
D
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
ORDERING INFORMATION
Device
NTMFS4826NET1G
NTMFS4826NET3G
Package
SO−8FL
(Pb−Free)
SO−8FL
(Pb−Free)
Shipping
1500 /
Tape & Reel
5000 /
Tape & Reel
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V,
I
L
= 27 A
pk
, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
©
Semiconductor Components Industries, LLC, 2010
December, 2010
Rev. 0
1
Publication Order Number:
NTMFS4826NE/D

NTMFS4826NET3G Related Products

NTMFS4826NET3G NTMFS4826NET1G
Description mosfet nfetfl 30v 66a 5.9mohm MOSFET N-CH 30V 66A SO-8FL
Is it Rohs certified? conform to conform to
Maker ON Semiconductor ON Semiconductor
Parts packaging code DFN DFN
package instruction SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5
Contacts 8 8
Manufacturer packaging code CASE 488AA-01 CASE 488AA-01
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 9.5 A 9.5 A
Maximum drain-source on-resistance 0.0087 Ω 0.0087 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-F5 R-PDSO-F5
JESD-609 code e3 e3
Humidity sensitivity level 3 3
Number of components 1 1
Number of terminals 5 5
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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