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TC7SET00FU,LJ(CT

Description
IC GATE NAND 1CH 2-INP USV
Categorylogic    logic   
File Size180KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TC7SET00FU,LJ(CT Overview

IC GATE NAND 1CH 2-INP USV

TC7SET00FU,LJ(CT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
package instructionTSSOP,
Reach Compliance Codeunknown
Factory Lead Time12 weeks
Is SamacsysN
seriesAHCT/VHCT/VT
JESD-30 codeR-PDSO-G5
length2 mm
Logic integrated circuit typeNAND GATE
Number of functions1
Number of entries2
Number of terminals5
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
propagation delay (tpd)11.5 ns
Filter levelAEC-Q100
Maximum seat height1.1 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
width1.25 mm
Base Number Matches1
TC7SET00F/FU
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7SET00F, TC7SET00FU
2 Input NAND Gate
Features
High Speed : t
pd
= 4.2ns (typ) at V
CC
= 5 V, C
L
= 15pF
Low Power Dissipation : I
CC
= 2μA (Max) at Ta = 25℃
Compatible with TTL outputs
5.5-V tolerant inputs.
Balanced Propagation Delays
: t
pLH
t
pHL
TC7SET00FU
TC7SET00F
: V
IL
= 0.8 V (max)
V
IH
= 2.0 V (min)
(SMV)
Marking
Product Name
G
1
Weight
SSOP5-P-0.95
SSOP5-P-0.65A
(USV)
: 0.016 g (typ.)
: 0.006 g (typ.)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Lead temperature (10s)
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
T
L
Rating
−0.5
to 7.0
−0.5
to 7.0
−0.5
to VCC+0.5
−20
±20
(Note 1)
±25
±50
200
−65
to 150
260
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
Pin Assignment
(top view)
IN B
1
5
V
CC
IN A
2
GND
3
4
OUT Y
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: V
OUT
< GND, V
OUT
> V
CC
1
2009-09-29

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