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CMKD7000 TR

Description
DIODE SWITCHING 100V SOT363
Categorysemiconductor    Discrete semiconductor   
File Size567KB,3 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

CMKD7000 TR Overview

DIODE SWITCHING 100V SOT363

CMKD7000 TR Parametric

Parameter NameAttribute value
Diode configuration2 pairs in series
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)100V
Current - average rectification (Io) (per diode)200mA
Voltage at different If - Forward (Vf1.1V @ 100mA
speedSmall signal =< 200mA (Io), any speed
Reverse recovery time (trr)4ns
Current at different Vr - Reverse leakage current500nA @ 100V
Operating Temperature - Junction-65°C ~ 150°C
Installation typesurface mount
Package/casing6-TSSOP,SC-88,SOT-363
Supplier device packagingSOT-363
CMKD7000
SURFACE MOUNT
DUAL PAIR, IN-SERIES
ULTRA-HIGH SPEED SILICON
SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD7000
consists of two pair of electrically isolated, series
configured ultra-high speed switching diodes in an
ULTRAmini™ SOT-363 surface mount package,
designed for ESD protection and high speed switching
applications.
MARKING CODE: K00
SOT-363 CASE
MAXIMUM RATINGS:
(TA=25°C)
Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IO
IFM
PD
TJ, Tstg
Θ
JA
100
200
500
250
-65 to +150
500
UNITS
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR
IR
IR
BVR
VF
VF
VF
CT
trr
VR=50V
VR=50V, TA=125°C
VR=100V
IR=100μA
IF=1.0mA
IF=10mA
IF=100mA
VR=0, f=1.0MHz
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
100
0.55
0.67
0.75
1.5
2.0
0.70
0.82
1.10
2.6
4.0
300
100
500
UNITS
nA
μA
nA
V
V
V
V
pF
ns
R4 (13-January 2010)

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