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BCM53DSX

Description
BCM53DS/SOT457/SC-74
Categorysemiconductor    Discrete semiconductor   
File Size234KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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BCM53DSX Overview

BCM53DS/SOT457/SC-74

BCM53DSX Parametric

Parameter NameAttribute value
Transistor type2 PNP (double) pairing
Current - Collector (Ic) (Maximum)1A
Voltage - collector-emitter breakdown (maximum)80V
Vce saturation value (maximum value) when different Ib,Ic500mV @ 50mA,500mA
Current - collector cutoff (maximum)100nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)63 @ 150mA,2V
Power - Max500mW
Frequency - Transition140MHz
Operating temperature150°C(TJ)
Installation typesurface mount
Package/casingSC-74,SOT-457
Supplier device packaging6-TSOP
BCM53DS
10 April 2018
80 V, 1 A PNP/PNP matched double transistors
Product data sheet
1. General description
PNP/PNP matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD)
plastic package.
NPN/NPN complement: BCM56DS
2. Features and benefits
High collector current capability I
C
and I
CM
Reduces component count
Reduces pick and place costs
Current gain matching 5%
Application-optimized pinout
AEC-Q101 qualified
3. Applications
Current mirror
Differential amplifier
Linear voltage regulators
MOSFET drivers
High-side switches
Power management
Amplifiers
4. Quick reference data
Table 1. Quick reference data
Symbol
Per transistor
V
CEO
I
C
I
CM
h
FE
Per device
h
FE1
/h
FE2
DC current gain
matching
V
CE
= -5 V; I
C
= -2 mA; T
amb
= 25 °C
0.95
1
1.05
collector-emitter
voltage
collector current
peak collector current
DC current gain
single pulse; t
p
≤ 1 ms
V
CE
= -2 V; I
C
= -150 mA; T
amb
= 25 °C
[1]
open base
-
-
-
63
-
-
-
-
-80
-1
-2
250
V
A
A
Parameter
Conditions
Min
Typ
Max
Unit

BCM53DSX Related Products

BCM53DSX BCM53DSF
Description BCM53DS/SOT457/SC-74 BCM53DS/SOT457/SC-74
Transistor type 2 PNP (double) pairing 2 PNP (double) pairing
Current - Collector (Ic) (Maximum) 1A 1A
Voltage - collector-emitter breakdown (maximum) 80V 80V
Vce saturation value (maximum value) when different Ib,Ic 500mV @ 50mA,500mA 500mV @ 50mA,500mA
Current - collector cutoff (maximum) 100nA(ICBO) 100nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value) 63 @ 150mA,2V 63 @ 150mA,2V
Power - Max 500mW 500mW
Frequency - Transition 140MHz 140MHz
Operating temperature 150°C(TJ) 150°C(TJ)
Installation type surface mount surface mount
Package/casing SC-74,SOT-457 SC-74,SOT-457
Supplier device packaging 6-TSOP 6-TSOP
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