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BGA5M1BN6E6327XTSA1

Description
RF SILICON MMIC
CategoryTopical application    Wireless rf/communication   
File Size312KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BGA5M1BN6E6327XTSA1 Overview

RF SILICON MMIC

BGA5M1BN6E6327XTSA1 Parametric

Parameter NameAttribute value
frequency1.805GHz ~ 2.2GHz
P1dB-17dBm
Gain19.3dB
Noise Figure0.65dB
RF typeLTE
Voltage - Power1.5 V ~ 3.6 V
Current - Power9.5mA
Test frequency2GHz
BGA5M1BN6
BGA5M1BN6
18dB High Gain Low Noise Amplifier for LTE Midband
Features
Operating frequencies: 1805 - 2200 MHz
Insertion power gain: 19.3 dB
Insertion Loss in bypass mode: 4.7 dB
Low noise figure: 0.65 dB
Low current consumption: 9.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
0.7 x 1.1 mm
2
Application
The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end.
In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to
the basestation the bypass mode can be activated reducing current consumption.
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Block diagram
VCC
C
AI
ESD
AO
GND
BGA5M1BN6_Blockdiagram.vsd
Data Sheet
www.infineon.com
Revision 2.2
2018-03-15
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