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VS-MBRB3030CTL-M3

Description
DIODE SCHOTTKY 30V 15A D2PAK
CategoryDiscrete semiconductor    diode   
File Size244KB,11 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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VS-MBRB3030CTL-M3 Overview

DIODE SCHOTTKY 30V 15A D2PAK

VS-MBRB3030CTL-M3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instructionD2PAK-3/2
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time26 weeks
Other featuresFREE WHEELING DIODE
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current360 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2000 µA
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
VS-MBRB3030CTL-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
Base
common
cathode
2
FEATURES
• 150 °C T
J
operation
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
2
1
3
D
2
PAK (TO-263AB)
1
Anode
1
2
Common
cathode
3
Anode
2
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
E
AS
Package
Circuit configuration
2 x 15 A
30 V
0.34 V
183 mA at 125 °C
150 °C
13 mJ
D
2
PAK (TO-263AB)
Common cathode
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
15 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
30
30
1100
0.34
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB3030CTL-M3
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 3 A, L = 2.9 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
50 % duty cycle at T
C
= 121 °C rectangular waveform
30
A
1100
360
13
3
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
15
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
Revision: 09-Jan-18
Document Number: 96395
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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