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EPC9080

Description
BOARD DEV FOR EPC2045 & EPC2022
CategoryDevelopment board/suite/development tools   
File Size2MB,6 Pages
ManufacturerEPC
Environmental Compliance
Download Datasheet Parametric Compare View All

EPC9080 Overview

BOARD DEV FOR EPC2045 & EPC2022

EPC9080 Parametric

Parameter NameAttribute value
typePower management
Embedded-
IC/parts usedEPC2022,EPC2045
Main attributes-
What's includedplate
Auxiliary properties-
eGaN® FET DATASHEET
EPC2022
EPC2022 – Enhancement Mode Power Transistor
V
DSS
, 100 V
R
DS(on)
, 3.2 mΩ
I
D
, 90 A
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment
leveraging the infrastructure that has been developed over the last 60 years. GaN’s exceptionally
high electron mobility and low temperature coefficient allows very low R
DS(on)
, while its lateral device
structure and majority carrier diode provide exceptionally low Q
G
and zero Q
RR
. The end result is a
device that can handle tasks where very high switching frequency, and low on-time are beneficial
as well as those where on-state losses dominate.
Maximum Ratings
V
DS
I
D
V
GS
T
J
T
STG
Drain-to-Source Voltage (Continuous)
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150˚C)
Continuous (T
A
= 25˚C, R
θJA
= 2.5˚C/W)
Pulsed (25˚C, T
PULSE
= 300 µs)
Gate-to-Source Voltage
Gate-to-Source Voltage
Operating Temperature
Storage Temperature
100
120
90
390
6
-4
-40 to 150
-40 to 150
V
EFFICIENT POWER CONVERSION
HAL
EPC2022 eGaN® FETs are supplied only in
passivated die form with solder bumps.
Die Size: 6.05 mm x 2.3 mm
High Speed DC-DC Conversion
Motor Drive
Industrial Automation
Synchronous Rectification
Inrush Protection
Class-D Audio
A
V
˚C
www.epc-co.com/epc/Products/eGaNFETs/EPC2022.aspx
Static Characteristics
(T
J
= 25˚C unless otherwise stated)
PARAMETER
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(on)
V
SD
Drain-to-Source Voltage
Drain Source Leakage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Threshold Voltage
Drain-to-Source On Resistance
Source-to-Drain Forward Voltage
TEST CONDITIONS
V
GS
= 0 V, I
D
= 0.9 mA
V
DS
= 80 V, V
GS
= 0 V
V
GS
= 5 V
V
GS
= -4 V
V
DS
= V
GS
, I
D
= 13 mA
V
GS
= 5 V, I
D
= 25 A
I
S
= 0.5 A, V
GS
= 0 V
0.8
MIN
100
0.1
1
0.1
1.4
2.4
1.8
0.7
9
0.7
2.5
3.2
TYP
MAX
UNIT
V
mA
mA
mA
V
V
All measurements were done with substrate shorted to source.
Thermal Characteristics
TYP
R
θ
JC
R
θ
JB
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Board
Thermal Resistance, Junction to Ambient (Note 1)
0.4
1.1
42
UNIT
˚C/W
˚C/W
˚C/W
Note 1: R
θ
JA
is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC – EFFICIENT POWER CONVERSION CORPORATION |
WWW.EPC-CO.COM
| COPYRIGHT 2016 |
| 1

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