EPC2112 – 200 V, 10 A Integrated Gate Driver eGaN
®
IC
Preliminary Datasheet
FEATURES:
•
Integrated Gate Driver
– Low Propagation Delay
– Up to 7 MHz Operation
– Operates from 5 V Supply
•
•
200 V, 40-mΩ
eGaN FET
Low Inductance 2.9 mm x 1.1 mm BGA
Schematic Diagram
EPC2112 devices are supplied only in
passivated die form with solder balls
Die Size: 2.9 mm x 1.1 mm
APPLICATIONS:
•
Wireless Power (Highly Resonant and Inductive)
•
High Frequency DC-DC Conversion
DESCRIPTION
The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a
40-mΩ,
200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surface-
mount BGA.
The EPC2112 monolithic IC enables designers to
improve efficiency, save space,
and lower costs compared to
silicon-based solutions. The ultra-low capacitance and zero reverse recovery of the eGaN FET enables efficient
operation in many topologies. The integrated driver is specifically matched to the GaN device to yield optimal
performance under various operating conditions. Performance further enhanced due to the
small, low
inductance footprint. Monolithic integration eliminates interconnect inductances for higher efficiency at high
frequency. This is especially important for high frequency applications such as resonant wireless power.
Subject to Change without Notice
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COPYRIGHT 2018
Page 1
EPC2112 – 200 V, 10 A Integrated Gate Driver eGaN
®
IC
ABSOLUTE MAXIMUM RATINGS
Maximum Ratings
V
DS
I
D
V
IN
T
J
T
STG
V
CC
Drain-to-Source Voltage (Continuous)
Continuous
(T
A
= 25˚C, R
θJA
= 18 ˚C/W)
Pulsed (25˚C, T
PULSE
300 µs)
Input Signal Voltage
Operating Temperature
Storage Temperature
Supply Voltage
200
10
40
6
-40
to 150
-40
to 150
6
V
A
V
˚C
V
RECOMMENDED OPERATING CONDITIONS
Recommended Operating Conditions
PARAMETER
V
DS
V
CC
I
CC
V
IN,Off
V
IN,On
V
IN,slew
T
J
1
Description
Drain-Source voltage
Driver Supply voltage
External driver supply current
1
Input signal for turn-off
Input signal for turn-on
Input signal slew rate
Operating Temperature
MIN
4.5
TYP
5
MAX
160
5.5
50
0.5
UNIT
V
V
mA
V
V
V/ns
4.5
0.25
-40
150
°C
For up to maximum operating frequency
THERMAL INFORMATION
Thermal Characteristics
TYP
R
θJC
R
θJB
R
θJA
2
Unit
˚C/W
˚C/W
˚C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Board
Thermal Resistance, Junction to Ambient
2
1.7
20
66
Thermal models for EPC devices available at
http://epc-co.com/epc/DesignSupport/DeviceModels.aspx
R
θJA
is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
Subject to Change without Notice
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COPYRIGHT 2018
Page 2
EPC2112 – 200 V, 10 A Integrated Gate Driver eGaN
®
IC
ELECTRICAL CHARACTERSTICS
PARAMETER
TEST CONDITIONS
V
CC
= 0 V,
V
IN
= 0 V, I
D
= 125 µA
V
DS
= 160 V, T
J
= 25 °C
V
CC
= 5 V, T
J
= 25 °C
V
CC
= 5 V,
V
IN
= 0 V, I
SD
= 0.5 A
V
IN
= 0 V, V
CC
= 5 V, V
DS
= 100 V, f = 1 MHz
V
IN
= 0 V, V
CC
= 5 V, V
DS
= 0 to 100 V
V
IN
= 0 V, V
CC
= 5 V, V
DS
= 100 V, V
GS
= 0 V
MIN
200
20
32
2
150
175
233
24
0
nC
pF
100
40
TYP
MAX
Unit
V
µA
mΩ
V
eGaN POWER TRANSISTOR
BV
DSS
I
DSS
R
DS(ON)
V
SD
C
OSS
Drain-to-Source Voltage
Drain -Source Leakage
Drain-Source On-Resistance
Source-Drain Forward Voltage
Output Capacitance
C
OSS(ER)
Energy Output Capacitance,
Energy Related
3
C
OSS(TR)
Energy Output Capacitance,
Energy Related
4
Q
OSS
Q
RR
3
C
4
C
OSS(ER)
OSS(TR)
Output Charge
Source-Drain Recovery Charge
is a fixed capacitance that gives the same stored energy as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
is a fixed capacitance that gives the same charging time as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
ELECTRICAL CHARACTERSITCS
PARAMETER
TEST CONDITIONS
V
IN
= 5 V, V
CC
= 5 V, V
DS
= 0 V
V
IN
= 0 V, V
CC
= 5 V, V
DS
= 0 V
50% duty cycle, V
CC
= 5 V, f
SW
= 1 MHz
V
CC
= 5 V
V
CC
= 5 V
4.0
MIN
TYP
4
4
6.5
0.7
V
mA
MAX
Unit
DRIVER SUPPLY
I
VCC, ON
I
VCC, OFF
I
VCC, OP
V
IH
V
IL
Quiescent current (average)
Quiescent current (average)
Operating Current
Turn-on
Input pin, logic high
Turn-off
Input pin, logic low
SWITCHING CHARACTERISTICS
Switching Characteristics
PARAMETER
DRIVER
5
t
pd,on
t
rise
t
on
t
pd,off
t
fall
t
off
t
MIN
t
MAX
5
See
TEST CONDITIONS
MIN
TYP
2.7
2.7
MAX
UNIT
ns
ns
ns
ns
ns
ns
ns
ms
Propagation delay, turn on
Rise Time
Total turn-on time
Propagation delay, turn off
Fall Time
Total turn-off time
Minimum on-time
Maximum on-time
V
CC
= 5 V, V
BUS
= 160 V
V
CC
= 5 V, I
DS
= 0.5 A
V
CC
= 5 V, V
DS
= 160 V, I
L
= 4 A
8.5
16.9
5.5
26.5
9.2
40
application circuit, Figure 4
& 5
Subject to Change without Notice
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COPYRIGHT 2018
Page 3
EPC2112 – 200 V, 10 A Integrated Gate Driver eGaN
®
IC
TYPICAL CHARACTERSITCS
Figure 1: Normalized On-State Resistance vs Temperature
Figure 2: Capacitance (Linear Scale)
Figure 3: Output Charge and C
OSS
Stored Energy
Subject to Change without Notice
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COPYRIGHT 2018
Page 4
EPC2112 – 200 V, 10 A Integrated Gate Driver eGaN
®
IC
Figure 4: Double pulse Test Definitions
Figure 5: Double pulse Test Circuit
V
BUS
IN
I
DS
50%
t
pd,on
50%
t
pd,off
t
rise
t
fall
80%
20%
t
off
IN
V
CC
D.U.T.
L
Pulse
D
Clamp
V
DS
V
DS
80%
20%
t
on
L
Pulse
= 33
µH
D
Clamp
= MBR2H200SFT3G (OnSemi)
Figure 6: Driver quiescent current as function of frequency
Figure 7: Driver quiescent current as function of duty cycle
(50% duty cycle, V
cc
= 5 V, V
DS
= 0 V)
(1 MHz, V
CC
= 5 V, V
DS
= 0 V)
Subject to Change without Notice
www.epc-co.com
COPYRIGHT 2018
Page 5
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