BPC2425M7X60
Power LDMOS module
Rev. 1 — 29 March 2018
Product data sheet
1. Product profile
1.1 General description
60 W LDMOS power module with excellent gain flatness for Industrial, Scientific and
Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The module is
designed as a dual stage high gain medium power amplifier for CW and pulsed
applications.
Table 1.
Test information
Typical RF performance at V
DS
= 32 V; T
mb
= 25
C; I
Dq1(A)
= I
Dq1(B)
= 25 mA;
I
Dq2(A)
= I
Dq2(B)
= 50 mA.
Test signal
CW
CW pulsed
[1]
[1]
f
(MHz)
2450
2450
V
DS
(V)
32
32
P
L
(W)
60
60
G
p
(dB)
26
26.5
D
(%)
41
42
Pulse width is 300
s;
duty cycle is 50 %.
1.2 Features and benefits
Flat gain
Small size: 72
34 mm
Input/output 50
matched
Balanced configuration
Designed for broadband operation (2400 MHz to 2500 MHZ)
Built-in temperature sensor
Built-in temperature compensation in biasing networks
100 % RF testing in production
For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as industrial heating and drying, scientific, medical, plasma lighting and
solid state cooking
BPC2425M7X60
Power LDMOS module
2. Pinning information
2.1 Pinning
VD1A
VG2A
VG1A
3
9
7
5 VD2A
RF IN
1
2
RF OUT
VG1B
VG2B
VD1B
8
10
4
11
amp00638
TEMP
6 VD2B
Top view.
Fig 1.
Pin configuration
2.2 Pin description
Table 2.
Symbol
RF IN
RF OUT
VD1A
VD1B
VD2A
VD2B
VG1A
VG1B
VG2A
VG2B
TEMP
Pin description
Pin
1
2
3
4
5
6
7
8
9
10
11
Description
RF input
RF output
drain-source voltage driver, section A
drain-source voltage driver, section B
drain-source voltage final, section A
drain-source voltage final, section B
gate-source voltage driver, section A
gate-source voltage driver, section B
gate-source voltage final, section A
gate-source voltage final, section B
temperature sensor
3. Ordering information
Table 3.
Ordering information
Package
Name
BPC2425M7X60
-
Description
pallet LDMOS; 6 mounting holes; 11 terminations
Version
-
Type number
BPC2425M7X60
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2018. All rights reserved.
Product data sheet
Rev. 1 — 29 March 2018
2 of 12
BPC2425M7X60
Power LDMOS module
4. Block diagram
VD1A
VG2A
VG1A
VD2A
RF IN
RF OUT
VG1B
VG2B
VD1B
TEMP
-t°
VD2B
amp00639
Fig 2.
Block diagram
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
mb
Parameter
drain-source voltage
gate-source voltage
storage temperature
mounting base temperature
Conditions
non operating
non operating
Min
0
6
65
0
Max
65
+13
+85
85
Unit
V
V
C
C
6. Characteristics
Table 5.
DC characteristics
Conditions
V
GS
= 0 V; I
D
= 2.7 mA
driver (VG1A, VG1B):
V
DS
= 32 V; I
D
= 25 mA
final (VG2A, VG2B);
V
DS
= 32 V; I
D
= 50 mA
I
DSS
R
GS
C
iss
drain leakage current
gate-source resistance
input capacitance
VG1A, VG2B pins
VD1A, VD2B pins
V
GS
= 0 V; V
DS
= 32 V
Min
65
-
-
-
300
-
-
Typ
-
1.95
1.85
-
0.01
0.47
Max
-
-
-
4.20
-
-
Unit
V
V
V
A
F
F
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
gate-source threshold voltage
1500 5000
BPC2425M7X60
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2018. All rights reserved.
Product data sheet
Rev. 1 — 29 March 2018
3 of 12
BPC2425M7X60
Power LDMOS module
Table 6.
RF Characteristics
Test signal: CW; RF performance at T
mb
= 25
C; V
DS
= 32 V; I
Dq1(A)
= I
Dq1(B)
= 25 mA;
I
Dq2(A)
= I
Dq2(B)
= 50 mA; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
G
p
P
L(1dB)
P
L(3dB)
f
G
flat
RL
in
D
sup(H)
power gain
Conditions
P
L
= 60 W; f = 2400 MHz to
f = 2500 MHz
Min
25
-
-
2400
-
-
38.5
-
Typ
26
80
90
-
0.5
25
41
30
Max
-
-
-
Unit
dB
W
W
output power at 1 dB gain f = 2400 MHz to f = 2500 MHz
compression
output power at 3 dB gain f = 2400 MHz to f = 2500 MHz
compression
frequency
gain flatness
input return loss
drain efficiency
harmonic suppression
P
L
= 60 W
P
L
= 60 W; f = 2400 MHz to
f = 2500 MHz
P
L
= 60 W; f = 2400 MHz to
f = 2500 MHz
P
L
= 60 W; f = 2450 MHz
P
L
= 300 W; f = 2450 MHz
2500 MHz
-
12
-
-
dB
dB
%
dBc
6.1 Ruggedness in class-AB operation
The BPC2425M7X60 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases with a time rate of 15 ms/degree under the following
conditions: V
DS
= 32 V; I
Dq1(A)
= I
Dq1(B)
= 25 mA; I
Dq2(A)
= I
Dq2(B)
= 50 mA;
P
L
= 60 W (CW); f = 2450 MHz; T
mb
= 25
C.
BPC2425M7X60
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2018. All rights reserved.
Product data sheet
Rev. 1 — 29 March 2018
4 of 12
BPC2425M7X60
Power LDMOS module
7. Test information
7.1 Graphical data
7.1.1 CW
amp00640
amp00641
28
G
p
(dB)
26
50
η
D
(%)
40
24
(3)
(2)
(1)
30
(3)
(2)
(1)
22
20
20
0
20
40
60
80
P
L
(W)
100
10
0
20
40
60
80
P
L
(W)
100
I
Dq
= 2x25 + 2x50 mA; V
DS
= 32 V; T
mb
= 25
C.
(1) f = 2400 MHz
(2) f = 2450 MHz
(3) f = 2500 MHz
I
Dq
= 2x25 + 2x50 mA; V
DS
= 32 V; T
mb
= 25
C.
(1) f = 2400 MHz
(2) f = 2450 MHz
(3) f = 2500 MHz
Fig 3.
Power gain as a function of output power;
typical values
Fig 4.
Drain efficiency as a function of output power;
typical values
BPC2425M7X60
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2018. All rights reserved.
Product data sheet
Rev. 1 — 29 March 2018
5 of 12
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