Constant Impedance K
|Z|
SPST RF
Switch 30 MHz to 8000 MHz
F2910
Datasheet
Description
The F2910 is a high reliability, low insertion loss, 50 Ω absorptive
SPST RF switch designed for a multitude of wireless and RF
applications. This device covers a broad frequency range from
30 MHz to 8000 MHz. In addition to providing low insertion loss,
the F2910 also delivers excellent linearity and isolation
performance while providing a 50 Ω termination on RF2 in the
isolation mode. The F2910 includes a patent pending constant
impedance
K
|Z|
feature for the RF2 port.
K
|Z|
maintains near
constant impedance when switching RF ports and improves hot
switching ruggedness.
K
|Z|
minimizes VSWR transients and
reduces phase and amplitude variations when switching.
The F2910 uses a single positive supply voltage supporting either
3.3 V or 1.8 V control logic.
Features
Insertion Loss
0.58 dB at 2 GHz
High Isolation
51 dB at 2 GHz
High Linearity
IIP3 of 65 dBm
Wide Single Positive Supply Voltage Range
3.3 V and 1.8 V compatible control logic
Operating temperature -55 °C to +105 °C
2 mm x 2 mm 8-pin DFN package
Block Diagram
Figure 1. Block Diagram
Competitive Advantage
The F2910 provides constant impedance for one RF port during
transitions, improving a system’s hot-switching ruggedness. The
device also supports high power handling and high isolation.
Constant impedance
K
|Z|
during switching transition
Low insertion loss
High isolation
Excellent linearity
Extended temperature range: -55 °C to +105 °C
Typical Applications
Base Station 2G, 3G, 4G
Portable Wireless
Repeaters and E911 systems
Digital Pre-Distortion
Public Safety Infrastructure
WIMAX Receivers and Transmitters
Military Systems, JTRS radios
RFID handheld and portable readers
Cable Infrastructure
Wireless LAN
Test / ATE Equipment
© 2016 Integrated Device Technology, Inc
1
August 30, 2016
F2910 Datasheet
Pin Assignments
Figure 2. Pin Assignments for 2 mm x 2 mm x 0.9 mm 8-VFQFP-N – Top View
RF2
V1
VDD
RF1
8
EP
7
6
5
F2910
1
NC
2
GND
3
GND
4
NC
Pin Descriptions
Table 1. Pin Descriptions
Number
1, 4
2, 3
5
6
7
8
Name
NC
GND
RF1
V
DD
V1
RF2
EP
Description
This pin may be connected to the paddle and can be grounded.
Ground. Also, internally connected to the ground paddle. Ground this pin as close to the device as
possible.
RF1 Port. Matched to 50
Ω
in the insertion loss state only. If this pin is not 0 V DC, then an external
coupling capacitor must be used.
Power Supply. Bypass to GND with capacitors shown in the Typical Application Circuit as close as
possible to pin.
Logic control pin. See Table 6 for proper logic setting.
RF2 Port. Matched to 50 E. If this pin is not 0V DC, then an external coupling capacitor must be used.
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple
ground vias to provide heat transfer out of the device and into the PCB ground planes. These multiple
ground vias are also required to achieve the specified RF performance.
© 2016 Integrated Device Technology, Inc
2
August 30, 2016
F2910 Datasheet
Absolute Maximum Ratings
Stresses beyond those listed below may cause permanent damage to the device. Functional operation of the device at these or any other
conditions beyond those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Table 2. Absolute Maximum Ratings
Parameter
V
DD
to GND
V1 to GND
Symbol
V
DD
V
Logic
Minimum
-0.3
-0.3
-0.3
Maximum
+6.0
Lower of
(V
DD
+ 0.3V, 3.6V)
+0.3
33
23
30
+140
+150
+260
2000
(Class 2)
1000
(Class C3)
Units
V
V
V
dBm
°C
°C
°C
V
V
RF1, RF2 to GND
V
RF
RF Input Power Port 1 or 2 Other port terminated into 50 Ω
[a]
P
RF12
RF Input Power Port 1 in isolation Port 2 terminated into 50 Ω
[a]
P
RF1_ISO
RF Input Power Port 2 in isolation Port 1 terminated into 50 Ω
[a]
P
RF2_ISO
Maximum Junction Temperature
T
jmax
Storage Temperature Range
T
ST
Lead Temperature (soldering, 10s)
T
LEAD
ElectroStatic Discharge – HBM
V
ESDHBM
(JEDEC/ESDA JS-001-2012)
ElectroStatic Discharge – CDM
V
ESDCDM
(JEDEC 22-C101F)
a. V
DD
= 2.7 V to 5.5 V, 30 MHz F
RF
8000 MHz, T
c
= 105°C, Z
S
= Z
L
= 50 ohms.
-65
© 2016 Integrated Device Technology, Inc
≤
≤
3
August 30, 2016
F2910 Datasheet
Recommended Operating Conditions
Table 3. Recommended Operating Conditions
Parameter
Power supply voltage
Logic Input High Threshold
Logic Input Low Threshold
Operating Temperature
Range
RF Frequency Range
Symbol
V
DD
V
IH
V
IL
T
CASE
F
RF
Condition
2.7 V ≤ V
DD
≤ 5.5 V
Minimum
2.7
1.1
[a]
-0.3
[b]
-55
30
Typical
Maximum
5.5
Lower of (V
DD
, 3.6)
0.6
+105
8000
[c]
30
27
20
17
27
24
24
Units
V
V
V
°C
MHz
Exposed Paddle Temperature
RF Continuous
Input CW Power
(Non-Switched)
[d]
P
RF
RF1 or RF2 as the input T
c
= 85 ºC
(Insertion loss state)
T
c
= 105 ºC
T
c
= 85 ºC
RF1 as the input
(Isolation state)
T
c
= 105 ºC
T
c
= 85 ºC
RF2 as the input
(Isolation state)
T
c
= 105 ºC
Applied to RF2 input
switching between
Insertion loss to
Isolation states
T
c
= 85 ºC
T
c
= 105 ºC
dBm
RF Continuous
Input Power
(RF Hot Switching CW)
[d]
P
RFSW
dBm
21
RF1/2 Port Impedance
Z
RFx
Insertion loss state
50
E
RF2 Port Impedance
Z
RFx
Isolation state
50
E
a. Items in min/max columns in
bold italics
are Guaranteed by Test.
b. Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
c. To achieve best performance from 5 – 8 GHz, the use of bypass capacitors as described in the Applications Circuit section is
required.
d. Levels based on: V
DD
= 2.7 V to 5.5 V, 30 MHz F
RF
8000 MHz, Z
S
= Z
L
= 50 ohms. See Figure 3 for power handling
derating vs RF frequency.
Figure 3. Maximum RF Input Operating Power vs. RF Frequency
© 2016 Integrated Device Technology, Inc
≤
≤
4
August 30, 2016
F2910 Datasheet
Electrical Characteristics
Table 4. Electrical Characteristics
Typical Application Circuit: V
DD
= 3.3 V, T
CASE
= +25 °C, F
RF
= 2 GHz, Driven Port = RF2, Input power = 0 dBm, Z
S
= Z
L
= 50 E. PCB board
trace and connector losses are de-embedded unless otherwise noted. IIP2 / IIP3: P
IN
= 13 dBm / tone, 50 MHz spacing. Performance
beyond 5 GHz based on application circuit (Figure 20) using best RF PCB design practices. See note c for details.
Parameter
Logic Current
DC Current
Symbol
I
IH
, I
IL
I
DD
V
DD
=3.3 V
V
DD
=5.0 V
0.03 GHz
0.35 GHz
1.0 GHz
2.0 GHz
Insertion Loss
IL
Condition
Min
-1
190
220
0.38
0.44
0.50
0.55
0.60
0.67
0.75
0.80
[c]
1.00
[c]
1.55
[c]
85
73
61
51
46
41
37
33
[c]
29
[c]
26
[c]
3.3:1
2.0:1
27
25
20
18
20
[c]
25
[c]
13
[c]
Typ
Max
+1
304
[a]
374
Units
µA
µA
0.70
[b]
0.80
0.85
0.90
1.00
3.0 GHz
dB
4.0 GHz
5.0 GHz
6.0 GHz
7.0 GHz
8.0 GHz
0.03 GHz
0.35 GHz
66
1.0 GHz
55
2.0 GHz
45
3.0 GHz
40
Isolation
ISO
dB
4.0 GHz
35
5.0 GHz
30
6.0 GHz
7.0 GHz
8.0 GHz
Insertion Loss to Isolation
Max RF2 Port
VSWR
VSWR During Switching
Isolation to Insertion Loss
2.0 GHz
3.0 GHz
4.0 GHz
RF1, RF2 Return Loss
RF
RL
5.0 GHz
dB
(Insertion Loss State)
6.0 GHz
7.0 GHz
8.0 GHz
a. Items in min/max columns in
bold italics
are Guaranteed by Test.
b. Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
c. To achieve performance beyond 5 GHz, the use of bypass capacitors (BOM C2, C3, and C5) installed close to the device as
embodied in the evaluation board per the application circuit (Figure 20) is required. See the appropriate Typical Operating
Conditions graphs.
© 2016 Integrated Device Technology, Inc
5
August 30, 2016
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