High Linearity SP2T Wi-Fi RF Switch
100MHz to 8GHz
Description
The F2950 is a high power, reflective 50Ω, single-pole double-
throw (SP2T) RF switch. This device covers a 100MHz to 8GHz
frequency range to support a wide variety of applications including
WLAN 802.11.
The F2950 uses a single positive supply voltage and is
compatible with both 1.8V and 3.3V control logic.
Datasheet
F2950
Features
Low insertion loss: 0.58dB at 2.5GHz
High isolation: 44dB at 2.5GHz
Excellent linearity:
IIP3 +69dBm at 2.4GHz and 5.9GHz
IIP2 +115dBm at 2.4GHz
IIP2 +117dBm at 5.9GHz
Second Harmonic: -93dBc at 5.9GHz
Third Harmonic: -85dBc at 5.9GHz
Typical switching speed: 170ns
Supply voltage: +2.7V to +5.5V
1.8V and 3.3V compatible control logic
-40°C to +105°C operating temperature range
1.5mm x 1.5mm, 6-pin DFN package
Competitive Advantage
The F2950 provides extremely low insertion loss across a very
broad bandwidth while providing high linearity performance
across its operating range.
Optimized for Wi-Fi applications
Wide bandwidth
Low insertion loss
Excellent linearity
High power handling for large peak-to-average applications
Fast switching
No external matching required
Minimal footprint
Block Diagram
Figure 1.
Block Diagram
RFC
Typical Applications
802.11 Wi-Fi
Wireless Access Points, Gateways and Router Applications
LTE and 4G Communication Systems
2-Way Radios
General Purpose
RF1
RF2
VCC
V
CTL
© 2017 Integrated Device Technology, Inc.
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Rev O Aug 8, 2017
F2950 Datasheet
Pin Assignments
Figure 2.
Pin Assignments for 1.5mm x 1.5mm x 0.55mm DFN, NEG6 – Top View
V
CTL
1
EP
6
RF1
RFC
2
F2950
5
GND
VCC
3
4
RF2
Pin Descriptions
Table 1.
Pin Descriptions
Pin
1
2
3
4
5
6
Name
V
CTL
RFC
V
CC
RF2
GND
RF1
EP
Function
Logic control pin. See Table 7 for logic control states.
RF common port. Matched to 50Ω in the insertion loss state only. If this pin is not 0V DC, then an external
coupling capacitor must be used.
Power supply. Bypass to GND with capacitors as close as possible to the pin.
RF2 port. Matched to 50Ω in the insertion loss state only. If this pin is not 0V DC, then an external coupling
capacitor must be used.
Ground. Ground this pin as close to the device as possible.
RF1 port. Matched to 50Ω in the insertion loss state only. If this pin is not 0V DC, then an external coupling
capacitor must be used.
Exposed pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple
ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple ground
vias are also required to achieve the specified RF performance.
© 2017 Integrated Device Technology, Inc.
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Rev O August 8, 2017
F2950 Datasheet
Absolute Maximum Ratings
Stresses beyond those listed below may cause permanent damage to the device. Functional operation of the device at these or any other
conditions beyond those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Table 2.
Absolute Maximum Ratings
Parameter
V
CC
to GND
V
CTL
to GND
RF1, RF2, RFC to GND
100MHz ≤ f
RF
≤ 200MHz
Maximum Input CW Power,
Z
S
= Z
L
= 50Ω,
T
EP
= 25°C, V
CC
= 5.25V
(any port, insertion loss state)
[a]
200MHz < f
RF
≤ 500MHz
500MHz < f
RF
≤ 1GHz
1GHz < f
RF
≤ 6GHz
f
RF
> 6GHz
100MHz ≤ f
RF
≤ 200MHz
Maximum Peak Power,
Z
S
= Z
L
= 50Ω,
T
EP
= 25°C, V
CC
= 5.25V
(any port, insertion loss state)
[a], [b]
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10s)
Electrostatic Discharge – HBM
(JEDEC/ESDA JS-001-2012)
Electrostatic Discharge – CDM
(JEDEC 22-C101F)
[a] T
EP
is the temperature of the exposed paddle.
[b] 5% duty cycle of 4.6ms period in a 50Ω environment.
200MHz < f
RF
≤ 500MHz
500MHz < f
RF
≤ 1GHz
1GHz < f
RF
≤ 6GHz
f
RF
> 6GHz
Symbol
V
CC
V
LOGIC
V
RF
P
ABSCW1
P
ABSCW2
P
ABSCW3
P
ABSCW4
P
ABSCW5
P
ABSPK1
P
ABSPK2
P
ABSPK3
P
ABSPK4
P
ABSPK5
T
JMAX
T
STOR
T
LEAD
V
ESDHBM
V
ESDCDM
Minimum
-0.3
-0.3
-0.3
Maximum
+6.0
Lower of
(V
CC
+ 0.3, 3.9)
+0.3
28
29
30
31
30
35
36
37
38
37
+140
Units
V
V
V
dBm
dBm
°C
°C
°C
V
V
-65
+150
+260
2000
(Class C2)
500
(Class C2)
© 2017 Integrated Device Technology, Inc.
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Rev O August 8, 2017
F2950 Datasheet
Recommended Operating Conditions
Table 3.
Recommended Operating Conditions
Parameter
Power Supply Voltage
Operating Temperature Range
RF Frequency Range
RF Input
Power
[b]
Symbol
V
CC
T
EP
f
RF
P
RF_CW
P
RF_PULSE
Conditions
Exposed paddle
CW, insertion loss state
5% duty cycle of 4.6ms period,
insertion loss state
Min
2.7
[a]
-40
0.1
Typ
3.3
+25
See Figure 3
See Figure 3
Max
5.5
+105
8
Units
V
°C
GHz
dBm
Ω
RFC, RF1, RF2 Port Impedance
Z
RF
50
[a] Functional with reduced performance for 2.3V ≤ V
CC
< 2.7V.
[b] Levels based on: V
CC
= 2.7V to 5.5V, 100MHz ≤ f
RF
≤ 8GHz, Z
S
= Z
L
= 50Ω. See Figure 3 for power handling derating
vs. RF frequency.
Figure 3.
Maximum RF Input Operating Power vs. RF Frequency (Z
S
= Z
L
= 50Ω)
© 2017 Integrated Device Technology, Inc.
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Rev O August 8, 2017
F2950 Datasheet
Electrical Characteristics
Table 4.
Electrical Characteristics
See F2950 Typical Application Circuit. Specifications apply when operated with V
CC
= +3.3V, T
EP
= +25°C, P
IN
= 0dBm, Z
S
= Z
L
= 50Ω, single
tone and two tone signals applied at RF1 or RF2 and measured at RFC when in the ON state, PCB board trace and connector losses are de-
embedded, unless otherwise noted.
Parameter
Logic Input High Threshold
Logic Input Low Threshold
Logic Current
DC Current
Symbol
V
IH
V
IL
I
IH,
I
IL
I
CC
V
CTL
pin
V
CTL
pin
V
CTL
pin
Conditions
Min
1.1
[b]
-0.3
-1
170
0.54
0.58
0.61
0.64
0.67
0.73
53
44
40
37
34
31
54
44
40
37
34
30
25
23
22
21
20
20
Typ
Max
Lower of
(V
CC
, 3.6)
0.6
+1
250
[a]
0.74
0.79
0.83
0.88
0.90
Units
V
V
µA
µA
f
RF
= 100MHz to 900MHz
f
RF
= 900MHz to 2500MHz
[c]
f
RF
= 2500MHz to 3700MHz
Insertion Loss (RF1 or RF2 to RFC)
IL
f
RF
= 3700MHz to 4900MHz
f
RF
= 4900MHz to 6000MHz
f
RF
= 6000MHz to 8000MHz
f
RF
= 100MHz to 900MHz
48
f
RF
= 900MHz to 2500MHz
39
f
RF
= 2500MHz to 3700MHz
35
Isolation (RF1 or RF2 to RFC)
ISO1
f
RF
= 3700MHz to 4900MHz
32
f
RF
= 4900MHz to 6000MHz
f
RF
= 6000MHz to 8000MHz
f
RF
= 100MHz to 900MHz
50
f
RF
= 900MHz to 2500MHz
40
f
RF
= 2500MHz to 3700MHz
35
Isolation (RF1 to RF2, RF2 to RF1)
ISO2
f
RF
= 3700MHz to 4900MHz
32
f
RF
= 4900MHz to 6000MHz
f
RF
= 6000MHz to 8000MHz
f
RF
= 100MHz to 900MHz
f
RF
= 900MHz to 2500MHz
f
RF
= 2500MHz to 3700MHz
Return Loss (RFC, RF1, RF2)
RL
f
RF
= 3700MHz to 4900MHz
f
RF
= 4900MHz to 6000MHz
f
RF
= 6000MHz to 8000MHz
[a] Items in min/max columns in
bold italics
are guaranteed by test.
[b] Items in min/max columns that are not bold italics are guaranteed by design characterization.
[c] Minimum or maximum specification guaranteed by test at 2.5GHz and by design characterization over the whole frequency
range.
dB
dB
dB
dB
© 2017 Integrated Device Technology, Inc.
5
Rev O August 8, 2017
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