High-Bandwidth, Low Voltage, Dual SPDT Analog Switches
DESCRIPTION
The DG2519E is monolithic CMOS dual single-pole /
double-throw (SPDT) analog switches. It is specifically
designed for low-voltage, high bandwidth applications.
The DG2519E on-resistance, matching and flatness are
guaranteed over the entire analog voltage range. Wide
dynamic performance is achieved with typical at -61 dB for
both cross-talk and off-isolation at 1 MHz.
Both SPDT’s operate with independent control logic,
conduct equally well in both directions and block signals up
to the power supply level when off. Break-before-make is
guaranteed.
With fast switching speeds, low on-resistance, high
bandwidth, and low charge injection, the DG2519E are
ideally suited for audio and video switching with high
linearity.
Built on Vishay Siliconix’s low voltage CMOS technology,
the DG2519E contain an epitaxial layer which prevents
latch-up
FEATURES
•
•
•
•
•
Single supply (1.8 V to 5.5 V)
Low on-resistance - R
ON
: 2.5
Crosstalk and off isolation: -61 dB at 1 MHz
MSOP-10 and DFN-10 package
Material categorization: for definitions of
compliance please see
www.vishay.com/doc?99912
Reduced power consumption
High accuracy
Reduce board space
Low-voltage logic compatible
High bandwidth
Cellular phones
Speaker headset switching
Audio and video signal routing
PCMCIA cards
Low-voltage data acquisition
ATE
BENEFITS
•
•
•
•
•
•
•
•
•
•
•
APPLICATIONS
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
IN
NO1
GND
NO2
EN
LOGIC
1
2
3
4
5
Top view
10
9
8
7
6
COM1
NC1
V+
NC2
COM2
EN
1
1
0
0
NC1 and NC2
ON
OFF
OFF
OFF
NO1 and NO2
OFF
ON
OFF
OFF
0
1
0
1
ORDERING INFORMATION
TEMP. RANGE
-40 °C to +85 °C
PACKAGE
MSOP-10
DFN-10
PART NUMBER
DG2519EDQ-T1-GE3
DG2519EDN-T1-GE4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reference V+ to GND
IN, COM, NC, NO
a
LIMIT
-0.3 to +6
-0.3 to (V+ + 0.3)
± 50
± 200
-65 to +150
MSOP-10
DFN-10
d
c
UNIT
V
mA
°C
mW
V
mA
Continuous current (any terminal)
Peak current (pulsed at 1 ms, 10 % duty cycle)
Storage temperature (D suffix)
Power dissipation (packages)
b
ESD / HBM
ESD / CDM
Latch up
320
1191
7.5k
1.5k
300
EIA / JESD22-A114-A
EIA / JESD22-C101-A
JESD78
Notes
a. Signals on NC, NO, COM, IN, or EN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings
b. All leads welded or soldered to PC board
c. Derate 4 mW/°C above 70 °C
d. Derate 14.9 mW/°C above 70 °C
S17-0461-Rev. A, 03-Apr-17
Document Number: 78595
1
For technical questions, contact:
analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2519E
www.vishay.com
Vishay Siliconix
LIMITS
-40 °C to +85 °C
MIN.
0
-
-
-
-
-
-
-
-
-1
-5
-1
-5
-1
-5
-1
1.5
-
-
-
-
-
-
3
2
-
-
-
-
-
-
-
-
-
-
2.7
V+ = 2.7 V, V
IN
= 0 V or 2.7 V
Full
-
c
SPECIFICATIONS
(V+ = 3 V)
PARAMETER
Analog Switch
Analog signal range
d
V
ANALOG
V+ = 1.8 V, V
NC/NO
= 0.4 V / V+, I
NC/NO
= 8 mA
Drain-source on-resistance
R
DS(on)
V+ = 2.7 V, V
COM
= 0.8 V / 1.8 V, I
COM
= 10 mA
On-resistance matching
On-resistance flatness
d, f
Off leakage current
g
COM off leakage current
g
Channel-on leakage
current
g
Digital Control
Input current
d
Input high voltage
d
SYMBOL
TEST CONDITIONS
TEMP.
OTHERWISE UNLESS SPECIFIED
a
V+ = 3 V, ± 10 %, V
IN/ENL
= 0.4 V, V
IN/ENH
= 1.5 V
e
Full
Room
Full
Room
Full
Room
V+ = 2.7 V, V
COM
= 0.8 V / 1.4 V / 1.8 V,
I
COM
= 10 mA
Full
Room
Full
Room
V+ = 3.6 V, V
NC/NO
= 1 V / 3.2 V,
V
COM
= 3.2 V / 1 V, V
EN
= 0 V
Full
Room
Full
V+ = 3.3 V, V
COM
= V
NC/NO
= 1 V / 3.2 V
Room
Full
Full
Full
Full
Room
Room
Full
V
NC/NO
= 3 V, C
L
= 35 pf, R
L
= 300
Room
Full
Room
Full
C
L
= 1 nF, V
gen
= 1.5 V, R
gen
= 0
C
L
= 5 pF (set up capacitance)
R
L
= 50
,
C
L
= 5 pF
R
L
= 50
,
C
L
= 5 pF
f = 1 MHz
f = 10 MHz
f = 1 MHz
f = 10 MHz
Room
Room
Room
Room
Room
Room
Room
V+ = 2.7 V, f = 1 MHz
Room
Room
Room
UNIT
c
TYP.
-
7
-
4.6
-
0.02
-
0.62
-
0.01
-
0.01
-
0.01
-
-
-
-
3
21
-
11
-
13
-
b
MAX.
V+
11
13
5.5
6.5
0.3
0.6
1.1
1.5
1
5
1
5
1
5
1
-
0.4
-
45
50
35
45
-
-
-
-
-
-
-
-
-
-
-
-
3.3
1
V
R
DS(on)
R
flat(on)
I
NC/NO(off)
I
COM(off)
I
COM(on)
nA
I
INL
or I
INH
V
INH
V
INL
C
IN
μA
V
pF
Input low voltage
d
Digital input capacitance
d
Dynamic Characteristics
Turn-on time
Turn-off time
Break-before-make time
d
Charge injection
d
Bandwidth
d
t
ON
t
OFF
t
BBM
Q
INJ
BW
OIRR
crosstalk
d
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on)
V+
I+
ns
-10.2
222
-58
-47
-57
-47
7
7
24
24
-
-
pC
MHz
Off-isolation
d
Channel-to-channel
dB
NO, NC Off capacitance
d
Channel-on capacitance
d
Power Supply
Power supply range
Power supply current
d
pF
V
μA
Notes
a. Room = 25 °C, Full = as determined by the operating suffix
b. Typical values are for design aid only, not guaranteed nor subject to production testing
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
d. Guarantee by design, not subjected to production test
e. V
IN
= V+ voltage to perform proper function
f. Crosstalk measured between channels
g. Guarantee by 5 V testing
S17-0461-Rev. A, 03-Apr-17
Document Number: 78595
2
For technical questions, contact:
analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2519E
www.vishay.com
Vishay Siliconix
TEST CONDITIONS
OTHERWISE UNLESS SPECIFIED
V+ = 5 V, ± 10 %, V
IN/ENL
= 0.5 V, V
IN/ENH
= 2
V
e
LIMITS
-40 °C to +85 °C
MIN.
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
Full
Full
Full
Room
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
0
-
-
-
-
-
-
-2
-10
-2
-10
-2
-10
-
-
-1
2
-
-
-
-
-
-
3
2
-
-
-
-
-
-
-
-
-
-
-
4.5
-
c
SPECIFICATIONS
(V+ = 5 V)
PARAMETER
Analog Switch
Analog signal ranged
Drain-source on-resistance
On-resistance matching
On-resistance flatness
d, f
Off leakage current
g
COM off leakage current
g
Channel-on leakage current
g
Power down leakage
d
Digital Control
Input current
d
Input high voltage
d
Input low voltage
d
Digital input capacitance
d
Dynamic Characteristics
Turn-on time
Turn-off time
Break-before-make time
d
Propagation delay
d
Charge injection
d
Bandwidth
d
Off-isolation
d
Channel-to-channel
crosstalk
d
NO, NC Off capacitance
d
Channel-On capacitance
Power Supply
Power supply range
Power supply current
d
d
SYMBOL
TEMP.
a
UNIT
c
TYP.
-
2.5
-
0.01
-
0.61
-
0.16
-
0.20
-
0.20
-
0.01
0.01
-
-
-
3
14
-
7
-
8
-
325
-14
217
-61
-48
-61
-48
7
7
24
24
-
-
b
MAX.
V+
3.1
4
0.4
0.5
1
1.5
2
10
2
10
2
10
5
3
1
-
0.5
-
40
43
33
35
-
-
-
-
-
-
-
-
-
-
-
-
-
5.5
1
V
ANALOG
R
DS(on)
R
DS(on)
R
flat(on)
I
NC/NO(off)
I
COM(off)
I
COM(on)
I
PD
V+ = 4.5 V, V
COM
= 0.8 V / 3.5 V; I
COM
= 10 mA
V+ = 4.5 V, V
COM
= 0.8 V / 2.5 V / 3.5 V,
I
COM
= 10 mA
V
V+ = 5.5 V, V
NC/NO
= 1 V / 4.5 V,
V
COM
= 4.5 V / 1 V, V
EN
= 0 V
nA
V+ = 5.5 V, V
COM
= V
NC/NO
= 1 V / 4.5 V
V+ = 0 V, V
COM
= 5.5 V, NC/NO open
V+ = 0 V, V
NC/NO
= 5.5 V,
COM, open
μA
mA
μA
V
pF
I
INL
or I
INH
V
INH
V
INL
C
IN
t
ON
t
OFF
t
BBM
tpd
Q
INJ
BW
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on)
V+
I+
V+ = 5 V, no R
L
C
L
= 1 nF, V
gen
= 2.5 V, R
gen
= 0
C
L
= 5 pF (set up capacitance)
f = 1 MHz
R
L
= 50
,
C
L
= 5 pF
f = 10 MHz
f = 1 MHz
R
L
= 50
,
C
L
= 5 pF
f = 10 MHz
V
NC/NO
= 3 V, C
L
= 35 pf, R
L
= 300
ns
ps
pC
MHz
dB
V+ = 5 V, f = 1 MHz
pF
V+ = 5.5 V, V
IN
= 0 V or 5.5 V
Full
V
μA
Notes
a. Room = 25 °C, Full = as determined by the operating suffix
b. Typical values are for design aid only, not guaranteed nor subject to production testing
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
d. Guarantee by design, not subjected to production test
e. V
IN
= input voltage to perform proper function
f. Difference of min and max values
g. Guaranteed by 5 V testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0461-Rev. A, 03-Apr-17
Document Number: 78595
3
For technical questions, contact:
analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2519E
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
20
18
2nd line
R
ON
- On-Resistance (Ω)
16
14
12
10
8
6
4
2
0
0
1
V+ = +5 V
V+ = +3 V
V+ = +4.5 V
V+ = +2.7 V
V+ = +1.8 V
I
S
= 10 mA
Vishay Siliconix
Axis Title
10000
10
9
2nd line
I+ - Supply Current (nA)
8
7
6
5
4
3
2
1
10
0
-40
-20
0
20
40
60
80
100
Temperature (°C)
2nd line
V+ = +2.7 V
V+ = +5.5 V
V
IN/EN
= V+
10000
1000
1st line
2nd line
1000
1st line
2nd line
100
10
100
2
3
4
5
V
COM
- Analog Voltage (V)
2nd line
R
ON
vs. V
COM
and Single Supply Voltage
Supply Current vs. Temperature
Axis Title
7
+85 °C
Axis Title
10000
1000
100
2nd line
I+ - Supply Current (μA)
+25 °C
10000
6
2nd line
R
ON
- On-Resistance (Ω)
5
4
3
2
1
0
0.5
1
1.5
2
-40 °C
V+ = +2.7 V
I
S
= 10 mA
10
V+ = +5 V
1000
1st line
2nd line
0.1
V+ = +2.7 V
100
0.01
0.001
0.0001
100
10
2.5
3
V
COM
- Analog Voltage (V)
2nd line
0.00001
10
100
1000
10K
100K
1M
V
IN/EN
Switching Frequency (Hz)
2nd line
10
10M
R
ON
vs. Analog Voltage and Temperature
Positive Supply Current vs. Switching Frequency
Axis Title
4
+85 °C
Axis Title
10000
2nd line
t
ON(EN)
, t
OFF(EN)
- Switching Time (ns)
35
V+ = +3 V, t
ON
10000
2nd line
R
ON
- On-Resistance (Ω)
3
30
1000
V+ = +5 V, t
ON
+25 °C
1000
1st line
2nd line
2
100
1
V+ = +4.5 V
I
S
= 10 mA
-40 °C
20
100
15
V+ = +3 V, t
OFF
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
COM
- Analog Voltage (V)
2nd line
10
10
-50
-25
0
25
50
Temperature (°C)
2nd line
V+ = +5 V, t
OFF
10
75
100
R
ON
vs. Analog Voltage and Temperature
Switching Time vs. Temperature
S17-0461-Rev. A, 03-Apr-17
Document Number: 78595
4
For technical questions, contact:
analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
25
1st line
2nd line
1
1000
DG2519E
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
20
18
2nd line
t
BBM
- Switching Time (ns)
V+ = +3 V
2nd line
Leakage Current (pA)
Axis Title
Vishay Siliconix
10000
1000
I
COM(OFF)
, V
COM
= 1 V, V
NC/NO
= 4.5 V
I
COM(OFF)
, V
COM
= 4.5 V, V
NC/NO
= 1 V
10000
16
14
12
10
8
6
4
2
0
-50
-25
0
25
50
75
100
Temperature (°C)
2nd line
10
V+ = +5 V
0
1000
1st line
2nd line
100
10
0
20
40
Temperature (°C)
2nd line
60
80
100
-1000
I
COM(ON)
, V
COM/NC/NO
= 4.5 V
1000
1st line
2nd line
-2000
I
NC/NO(OFF)
, V
COM
= 4.5 V, V
NC/NO
= 1 V
I
NC/NO(OFF)
, V
COM
= 1 V, V
NC/NO
= 4.5 V
I
COM(ON)
, V
COM/NC/NO
= 1 V
100
-3000
-4000
V+ = +5.5 V
-40
-20
Switching Time vs. Temperature
Leakage Current vs. Temperature
Axis Title
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
10000
-40 °C to +85 °C
Axis Title
100
0
2nd line
Leakage Current (pA)
-100
-200
-300
-400
-500
10
I
COM(OFF)
, V
COM
= 3.2 V, V
NC/NO
= 1 V
10000
2nd line
V
T
- Switching Threshold (V)
1000
1st line
2nd line
V
IH
= -40 °C
I
COM(ON)
, V
COM/NC/NO
= 3.2 V
1000
1st line
2nd line
V
IL
= 85 °C
100
I
NC/NO(OFF)
, V
COM
= 1 V, V
NC/NO
= 3.2 V
I
COM(OFF)
, V
COM
= 1 V, V
NC/NO
= 3.2 V
I
COM(ON)
, V
COM/NC/NO
= 1 V
I
NC/NO(OFF)
, V
COM
= 3.2 V, V
NC/NO
= 1 V
V+ = +3.6 V
100
2
3
4
5
6
-600
10
0
20
40
60
Temperature (°C)
2nd line
80
100
V+ - Supply Voltage (V)
2nd line
-40
-20
Switching Threshold vs. Supply Voltage
Leakage Current vs. Temperature
Axis Title
20.0
10.0
10000
2000
1000
Leakage Current (pA)
I
NC/NO(off)
V+ = +5.5 V
I
COM(off)
2nd line
Q
INJ
- Charge Injection (pC)
0
-10.0
V+ = 1.8 V
V+ = 5 V
1000
1st line
2nd line
0
-1000
-2000
-3000
I
COM(on)
-20.0
-30.0
-40.0
0
1
V+ = 3 V
100
10
2
3
4
5
6
V
S
- Analog Voltage (V)
2nd line
-4000
0
1
2
3
4
5
6
V
D
- Analog Voltage (V)
Charge Injection vs. Source Voltage
Leakage Current vs. Analog Voltage
S17-0461-Rev. A, 03-Apr-17
Document Number: 78595
5
For technical questions, contact:
analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
EEWORLD
