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FK8V03040L

Description
MOSFET N CH 33V 10A WMINI8-F1
CategoryDiscrete semiconductor    The transistor   
File Size323KB,7 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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FK8V03040L Overview

MOSFET N CH 33V 10A WMINI8-F1

FK8V03040L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionHALOGEN FREE AND ROHS COMPLIANT, WMINI8-F1, SC-115, 8 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time10 weeks
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID1805112
Samacsys Pin Count8
Samacsys Part CategoryMOSFET (N-Channel)
Samacsys Package CategorySOT23 (8-Pin)
Samacsys Footprint NameWMini8-F1
Samacsys Released Date2019-02-07 09:35:59
Is SamacsysN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage33 V
Maximum drain current (Abs) (ID)10 A
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.019 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F8
Number of components1
Number of terminals8
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.5 W
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Doc No.
TT4-EA-13169
Revision.
3
Product Standards
MOS FET
FK8V03040L
FK8V03040L
Silicon N-channel MOSFET
For lithium-ion secondary battery protecion circuit
For DC-DC Converter
8
Unit: mm
2.9
0.3
7
6
5
0.16
Low drain-source On-state Resistance
RDS(on) typ = 11 m (VGS = 4.5 V)
High-speed switching : Qg = 7.2 nC
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
2
3
4
Marking Symbol: 3D
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1.
2.
3.
4.
0.65
Source
Source
Source
Gate
Panasonic
JEITA
Code
WMini8-F1
SC-115
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Drain-source Voltage
Gate-source Voltage
Drain Current (Steady State)
*1
Drain Current (t = 10 s)
*1
Drain Current (Pulsed)
*1,*2
Source Current (Pulsed)
(Body Diode)
*1,*2
Total Power Dissipation (Steady State)
*1
Total Power Dissipation (t = 10 s)
*1
Channel Temperature
Operating Ambient Temperature
Storage Temperature Range
Note)
Rating
33
20
10
12
40
10
1
1.5
150
-40 to + 85
-55 to +150
Unit
V
V
Internal Connection
(D)
8
(D)
7
(D)
6
(D)
5
VDS
VGS
ID
IDp
ISp
(BD)
PD
Tch
Topr
Tstg
A
W
C
C
C
1
(S)
2
(S)
3
(S)
Pin Name
1.
2.
3.
4.
Source
Source
Source
Gate
5.
6.
7.
8.
Drain
Drain
Drain
Drain
*1 Device mounted on a glass-epoxy board (See Figure 1)
*2 Pulse test: Ensure that the channel temperature does not exceed 150C.
Figure1 FR4 Glass-Epoxy Board
25.4 mm
25.4 mm
0.8 mm
Page 1 of 6
Established : 2011-04-06
Revised
: 2013-07-31
2.4
2.8
(0.81)
Features
5.
6.
7.
8.
Drain
Drain
Drain
Drain
4
(G)
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