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FDMB2308PZ Dual Common Drain P-Channel PowerTrench
®
MOSFET
April 2014
FDMB2308PZ
Dual Common Drain P-Channel PowerTrench
®
MOSFET
-20 V, -7 A, 36 mΩ
Features
Max r
S1S2(on)
= 36 mΩ at V
GS
= -4.5 V, I
D
= -5.7 A
Max r
S1S2(on)
= 50 mΩ at V
GS
= -2.5 V, I
D
= -4.6 A
Low Profile - 0.8 mm maximum - in the new package
MicroFET 2x3 mm
HBM ESD protection level 2.8 kV (Note 3)
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for Li-Ion battery pack protection circuit and other ultra-portable
applications.
It
features
two
common
drain
P-channel
MOSFETs, which enables bidirectional current flow, on
Fairchild’s advanced PowerTrench
®
process with state of the art
MircoFET Leadframe, the FDMB2308PZ minimizes both PCB
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