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DS1258Y-100#

Description
IC NVSRAM 2M PARALLEL 40EDIP
Categorystorage    storage   
File Size199KB,8 Pages
ManufacturerMaxim
Websitehttps://www.maximintegrated.com/en.html
Download Datasheet Parametric Compare View All

DS1258Y-100# Overview

IC NVSRAM 2M PARALLEL 40EDIP

DS1258Y-100# Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDMA
package instruction0.740 INCH, DIP-40
Contacts40
Reach Compliance Codenot_compliant
ECCN code3A991.B.2.A
Is SamacsysN
Maximum access time100 ns
Other features10 YEAR DATA RETENTION
JESD-30 codeR-XDMA-P40
JESD-609 codee0
memory density2097152 bit
Memory IC TypeNON-VOLATILE SRAM MODULE
memory width16
Number of functions1
Number of terminals40
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX16
Package body materialUNSPECIFIED
encapsulated codeDIP
Encapsulate equivalent codeDIP40,.6
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum standby current0.01 A
Maximum slew rate0.17 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DS1258Y/AB
128k x 16 Nonvolatile SRAM
www.maxim-ic.com
FEATURES
§
§
§
§
§
§
§
§
§
§
10-Year Minimum Data Retention in the
Absence of External Power
Data is Automatically Protected During a
Power Loss
Separate Upper Byte and Lower Byte Chip-
Select Inputs
Unlimited Write Cycles
Low-Power CMOS
Read and Write Access Times as Fast as 70ns
Lithium Energy Source is Electrically
Disconnected to Retain Freshness Until
Power is Applied for the First Time
Full
±10%
Operating Range (DS1258Y)
Optional
±5%
Operating Range (DS1258AB)
Optional Industrial Temperature Range of
-40°C to +85°C, Designated IND
PIN ASSIGNMENT
CEU
CEL
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
GND
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
OE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
V
CC
WE
A16
A15
A14
A13
A12
A11
A10
A9
GND
A8
A7
A6
A5
A4
A3
A2
A1
A0
40-Pin Encapsulated Package
740mil Extended
PIN DESCRIPTION
A0 to A16
DQ0 to DQ15
CEU
CEL
WE
OE
V
CC
GND
- Address Inputs
- Data In/Data Out
- Chip Enable Upper Byte
- Chip Enable Lower Byte
- Write Enable
- Output Enable
- Power (+5V)
- Ground
DESCRIPTION
The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as
131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry that constantly monitors V
CC
for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. DIP-package DS1258 devices can be used in place of solutions that build NV
128k x 16 memory by utilizing a variety of discrete components. There is no limit on the number of write
cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
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DS1258Y-100# Related Products

DS1258Y-100# DS1258Y-70# DS1258Y-70IND# DS1258AB-70# DS1258AB-100# DS1258AB-70IND#
Description IC NVSRAM 2M PARALLEL 40EDIP IC NVSRAM 2M PARALLEL 40EDIP IC NVSRAM 2M PARALLEL 40EDIP IC NVSRAM 2M PARALLEL 40EDIP IC NVSRAM 2M PARALLEL 40EDIP IC NVSRAM 2M PARALLEL 40EDIP
Is it Rohs certified? incompatible incompatible conform to incompatible conform to incompatible
Parts packaging code DMA DMA DMA DMA DMA DMA
package instruction 0.740 INCH, DIP-40 0.740 INCH, DIP-40 0.740 INCH, ROHS COMPLIANT, DIP-40 0.740 INCH, DIP-40 DIP, DIP40,.6 0.740 INCH, DIP-40
Contacts 40 40 40 40 40 40
Reach Compliance Code not_compliant not_compliant compliant not_compliant not_compliant not_compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 100 ns 70 ns 70 ns 70 ns 100 ns 70 ns
Other features 10 YEAR DATA RETENTION 10 YEAR DATA RETENTION 10 YEAR DATA RETENTION 10 YEAR DATA RETENTION 10 YEAR DATA RETENTION 10 YEAR DATA RETENTION
JESD-30 code R-XDMA-P40 R-XDMA-P40 R-XDMA-P40 R-XDMA-P40 R-XDMA-P40 R-XDMA-P40
memory density 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit
Memory IC Type NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE
memory width 16 16 16 16 16 16
Number of functions 1 1 1 1 1 1
Number of terminals 40 40 40 40 40 40
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 85 °C 70 °C 70 °C 85 °C
organize 128KX16 128KX16 128KX16 128KX16 128KX16 128KX16
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIP DIP DIP DIP DIP DIP
Encapsulate equivalent code DIP40,.6 DIP40,.6 DIP40,.6 DIP40,.6 DIP40,.6 DIP40,.6
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 245 NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.01 A 0.01 A 0.01 A 0.01 A 0.01 A 0.01 A
Maximum slew rate 0.17 mA 0.17 mA 0.17 mA 0.17 mA 0.17 mA 0.17 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.25 V 5.25 V 5.25 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.75 V 4.75 V 4.75 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Is it lead-free? Contains lead Contains lead - Contains lead - Contains lead
JESD-609 code e0 e0 - e0 e3 e0
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) MATTE TIN Tin/Lead (Sn/Pb)
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