EEWORLDEEWORLDEEWORLD

Part Number

Search

DS1258Y-70IND#

Description
IC NVSRAM 2M PARALLEL 40EDIP
Categorystorage    storage   
File Size199KB,8 Pages
ManufacturerMaxim
Websitehttps://www.maximintegrated.com/en.html
Environmental Compliance
Download Datasheet Parametric Compare View All

DS1258Y-70IND# Overview

IC NVSRAM 2M PARALLEL 40EDIP

DS1258Y-70IND# Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeDMA
package instruction0.740 INCH, ROHS COMPLIANT, DIP-40
Contacts40
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Is SamacsysN
Maximum access time70 ns
Other features10 YEAR DATA RETENTION
JESD-30 codeR-XDMA-P40
memory density2097152 bit
Memory IC TypeNON-VOLATILE SRAM MODULE
memory width16
Number of functions1
Number of terminals40
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX16
Package body materialUNSPECIFIED
encapsulated codeDIP
Encapsulate equivalent codeDIP40,.6
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum standby current0.01 A
Maximum slew rate0.17 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formPIN/PEG
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DS1258Y/AB
128k x 16 Nonvolatile SRAM
www.maxim-ic.com
FEATURES
§
§
§
§
§
§
§
§
§
§
10-Year Minimum Data Retention in the
Absence of External Power
Data is Automatically Protected During a
Power Loss
Separate Upper Byte and Lower Byte Chip-
Select Inputs
Unlimited Write Cycles
Low-Power CMOS
Read and Write Access Times as Fast as 70ns
Lithium Energy Source is Electrically
Disconnected to Retain Freshness Until
Power is Applied for the First Time
Full
±10%
Operating Range (DS1258Y)
Optional
±5%
Operating Range (DS1258AB)
Optional Industrial Temperature Range of
-40°C to +85°C, Designated IND
PIN ASSIGNMENT
CEU
CEL
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
GND
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
OE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
V
CC
WE
A16
A15
A14
A13
A12
A11
A10
A9
GND
A8
A7
A6
A5
A4
A3
A2
A1
A0
40-Pin Encapsulated Package
740mil Extended
PIN DESCRIPTION
A0 to A16
DQ0 to DQ15
CEU
CEL
WE
OE
V
CC
GND
- Address Inputs
- Data In/Data Out
- Chip Enable Upper Byte
- Chip Enable Lower Byte
- Write Enable
- Output Enable
- Power (+5V)
- Ground
DESCRIPTION
The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as
131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry that constantly monitors V
CC
for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. DIP-package DS1258 devices can be used in place of solutions that build NV
128k x 16 memory by utilizing a variety of discrete components. There is no limit on the number of write
cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
1 of 8
083006

DS1258Y-70IND# Related Products

DS1258Y-70IND# DS1258Y-70# DS1258AB-70# DS1258AB-100# DS1258AB-70IND# DS1258Y-100#
Description IC NVSRAM 2M PARALLEL 40EDIP IC NVSRAM 2M PARALLEL 40EDIP IC NVSRAM 2M PARALLEL 40EDIP IC NVSRAM 2M PARALLEL 40EDIP IC NVSRAM 2M PARALLEL 40EDIP IC NVSRAM 2M PARALLEL 40EDIP
Is it Rohs certified? conform to incompatible incompatible conform to incompatible incompatible
Parts packaging code DMA DMA DMA DMA DMA DMA
package instruction 0.740 INCH, ROHS COMPLIANT, DIP-40 0.740 INCH, DIP-40 0.740 INCH, DIP-40 DIP, DIP40,.6 0.740 INCH, DIP-40 0.740 INCH, DIP-40
Contacts 40 40 40 40 40 40
Reach Compliance Code compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 70 ns 70 ns 70 ns 100 ns 70 ns 100 ns
Other features 10 YEAR DATA RETENTION 10 YEAR DATA RETENTION 10 YEAR DATA RETENTION 10 YEAR DATA RETENTION 10 YEAR DATA RETENTION 10 YEAR DATA RETENTION
JESD-30 code R-XDMA-P40 R-XDMA-P40 R-XDMA-P40 R-XDMA-P40 R-XDMA-P40 R-XDMA-P40
memory density 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit
Memory IC Type NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE
memory width 16 16 16 16 16 16
Number of functions 1 1 1 1 1 1
Number of terminals 40 40 40 40 40 40
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 70 °C 70 °C 70 °C 85 °C 70 °C
organize 128KX16 128KX16 128KX16 128KX16 128KX16 128KX16
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIP DIP DIP DIP DIP DIP
Encapsulate equivalent code DIP40,.6 DIP40,.6 DIP40,.6 DIP40,.6 DIP40,.6 DIP40,.6
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 245 NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.01 A 0.01 A 0.01 A 0.01 A 0.01 A 0.01 A
Maximum slew rate 0.17 mA 0.17 mA 0.17 mA 0.17 mA 0.17 mA 0.17 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.25 V 5.25 V 5.25 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.75 V 4.75 V 4.75 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Is it lead-free? - Contains lead Contains lead - Contains lead Contains lead
JESD-609 code - e0 e0 e3 e0 e0
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) MATTE TIN Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
1602
Please help me. My LCD program writes a character to the first character in the first row, but the entire screen is displayed! ! have a look! !...
无泪的哭泣 FPGA/CPLD
Ask about CreateFile entry-level questions
// Open the driver hFlashFile = CreateFile(TEXT("COM1:"), GENERIC_READ | GENERIC_WRITE, 0, NULL, OPEN_EXISTING, 0, 0); I would like to ask how I can know in the COM driver whether I opened COM1 or oth...
jimmy0524 Embedded System
I have a question about Chinese fonts.
I upgraded the original single-chip handheld device and replaced it with ARM7. The original font library was stored in an AM29F040 FLASH. Now it runs on ARM. I think there are not many characters, rel...
wangzicc Embedded System
【Design Tools】FPGA White Paper: Floating-Point DSP Algorithm Implementation
Floating-point operations have always been the specialty of general-purpose CPUs, DSPs, and GPUs, but are now increasingly being implemented by FPGAs. This is mainly driven by emerging applications su...
GONGHCU FPGA/CPLD
Energy harvesting chips are becoming more and more popular
[font=宋体]If a terminal is on the ceiling (such as a smoke alarm or a light), you must be tired of climbing a ladder to replace the battery every once in a while. Or, the battery is in a well or an art...
抛砖引玉 Power technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 998  2707  2392  2600  1488  21  55  49  53  30 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号