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IRLR7811WCPBF

Description
MOSFET N-CH 30V 64A DPAK
Categorysemiconductor    Discrete semiconductor   
File Size206KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IRLR7811WCPBF Overview

MOSFET N-CH 30V 64A DPAK

IRLR7811WCPBF Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C64A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs10.5 milliohms @ 15A, 10V
Vgs (th) (maximum value) when different Id2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)31nC @ 4.5V
Vgs (maximum value)±12V
Input capacitance (Ciss) at different Vds (maximum value)2260pF @ 15V
FET function-
Power dissipation (maximum)71W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingD-Pak
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
SMPS MOSFET
PD - 96064
IRLR7811WCPbF
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
Lead-Free
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR7811WCPbF
HEXFET
®
Power MOSFET
V
DSS
30V
R
DS(on)
max
10.5mΩ
Q
g
19nC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 100°C
V
GS
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Power Dissipation*
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
64„
45„
260
71
1.5
0.48
±
12
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
2.1
50
110
Units
°C/W
Notes

through
„
are on page 9
www.irf.com
1
05/24/06

IRLR7811WCPBF Related Products

IRLR7811WCPBF IRLR7811WCTRRP IRLR7811WCTRLP
Description MOSFET N-CH 30V 64A DPAK MOSFET N-CH 30V 64A DPAK MOSFET N-CH 30V 64A DPAK
FET type N channel N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) at 25°C 64A(Tc) 64A(Tc) 64A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 4.5V,10V 4.5V,10V 4.5V,10V
Rds On (maximum value) when different Id, Vgs 10.5 milliohms @ 15A, 10V 10.5 milliohms @ 15A, 10V 10.5 milliohms @ 15A, 10V
Vgs (th) (maximum value) when different Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 31nC @ 4.5V 31nC @ 4.5V 31nC @ 4.5V
Vgs (maximum value) ±12V ±12V ±12V
Input capacitance (Ciss) at different Vds (maximum value) 2260pF @ 15V 2260pF @ 15V 2260pF @ 15V
Power dissipation (maximum) 71W(Tc) 71W(Tc) 71W(Tc)
Operating temperature -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ)
Installation type surface mount surface mount surface mount
Supplier device packaging D-Pak D-Pak D-Pak
Package/casing TO-252-3, DPak (2 leads + tab), SC-63 TO-252-3, DPak (2 leads + tab), SC-63 TO-252-3, DPak (2 leads + tab), SC-63
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