SMPS MOSFET
PD - 96064
IRLR7811WCPbF
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
Lead-Free
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR7811WCPbF
HEXFET
®
Power MOSFET
V
DSS
30V
R
DS(on)
max
10.5mΩ
Q
g
19nC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 100°C
V
GS
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation*
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
64
45
260
71
1.5
0.48
±
12
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
2.1
50
110
Units
°C/W
Notes
through
are on page 9
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1
05/24/06
IRLR7811WCPbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
∆ΒV
DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
R
DS(on)
V
GS(th)
Gate Threshold Voltage
∆
V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient
I
DSS
I
GSS
g
fs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
g
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge Control Fet
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Total Gate Charge Sync Fet
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
58
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
27
5.8
7.0
1.5
-5.0
–––
–––
–––
–––
–––
21
5.0
1.7
6.6
5.5
8.3
17
10
1.6
18
4.8
11
23
2260
420
180
Max.
–––
–––
10.5
15
2.5
–––
30
150
100
-100
–––
31
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
m
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
mΩ
V
GS
= 4.5V, I
D
= 12A
V
V
DS
= V
GS
, I
D
= 250µA
mV/°C
V
DS
= 24V, V
GS
= 0V
µA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
nA
V
GS
= -12V
S
V
DS
= 15V, I
D
= 12A
nC
V
DS
= 20V
V
GS
= 4.5V
nC I
D
= 12A
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
I
D
= 12A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
ns
pF
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
140
12
7.1
Units
mJ
A
mJ
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 64
showing the
A
G
integral reverse
––– ––– 260
S
p-n junction diode.
––– ––– 1.2
V
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
––– 30
45
ns
T
J
= 25°C, I
F
=12A
––– 27
41
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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IRLR7811WCPbF
10000
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
1000
100
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
10
2.5V
1
10
2.5V
0.1
20µs PULSE WIDTH
Tj = 25°C
1
20µs PULSE WIDTH
Tj = 175°C
100
0.1
1
10
100
0.01
0.1
1
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
2.0
I
D
= 64A
ID, Drain-to-Source Current
(Α
)
100.00
R
DS(on)
, Drain-to-Source On Resistance
T J = 175°C
1.5
(Normalized)
1.0
10.00
T J = 25°C
VDS = 15V
20µs PULSE WIDTH
2.0
3.0
4.0
5.0
6.0
7.0
0.5
1.00
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRLR7811WCPbF
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C SHORTED
gs
gd ds
Crss = C
gd
Coss = Cds + Cgd
6
I
D
=
12A
V
DS
= 24V
V
DS
= 15V
5
Ciss
V
GS
, Gate-to-Source Voltage (V)
C, Capacitance(pF)
4
1000
Coss
2
Crss
1
100
1
10
100
0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T
J
= 175
°
C
ID, Drain-to-Source Current (A)
100
I
SD
, Reverse Drain Current (A)
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VDS, Drain-to-Source Voltage (V)
10msec
10
T
J
= 25
°
C
1
V
GS
= 0 V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
100
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLR7811WCPbF
70
V
DS
LIMITED BY PACKAGE
R
D
60
V
GS
R
G
D.U.T.
+
50
-
V
DD
I
D
, Drain Current (A)
40
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
30
20
Fig 10a.
Switching Time Test Circuit
V
DS
10
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
(Z
thJC
)
1
D = 0.50
0.20
Thermal Response
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t
1
/ t
2
+T
C
1
J
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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