IRFR3910CPBF datasheet, PDF - EEWORLD Datasheet

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IRFR3910CPBF: DescriptionMOSFET N-CH 100V 16A DPAK; Categorysemiconductor Discrete semiconductor; File Size391KB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRFR3910CPBF Overview

MOSFET N-CH 100V 16A DPAK

IRFR3910CPBF Parametric

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	100V
Current - Continuous Drain (Id) at 25°C	16A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	115 milliohms @ 10A, 10V
Vgs (th) (maximum value) when different Id	4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	44nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	640pF @ 25V
FET function	-
Power dissipation (maximum)	79W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	surface mount
Supplier device packaging	D-Pak
Package/casing	TO-252-3, DPak (2 leads + tab), SC-63

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PD - 95079A

IRFR3910PbF

IRFU3910PbF

•

Lead-Free

www.irf.com

1

1/7/05

IRFR3910CPBF Related Products

	IRFR3910CPBF	IRFR3910TRRPBF	IRFR3910TRPBF
Description	MOSFET N-CH 100V 16A DPAK	Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3	Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 16A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 115mΩ @ 10A, 10V Maximum power dissipation (Ta= 25°C): 79W Type: N-channel N-channel 100V 16A
Is it Rohs certified?	-	conform to	conform to
Maker	-	Infineon	Infineon
package instruction	-	LEAD FREE, PLASTIC, DPAK-3	LEAD FREE, PLASTIC, DPAK-3
Reach Compliance Code	-	compliant	not_compliant
ECCN code	-	EAR99	EAR99
Other features	-	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	-	150 mJ	150 mJ
Shell connection	-	DRAIN	DRAIN
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	100 V	100 V
Maximum drain current (ID)	-	16 A	16 A
Maximum drain-source on-resistance	-	0.115 Ω	0.115 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	-	TO-252AA	TO-252AA
JESD-30 code	-	R-PSSO-G2	R-PSSO-G2
JESD-609 code	-	e3	e3
Humidity sensitivity level	-	1	1
Number of components	-	1	1
Number of terminals	-	2	2
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	260	260
Polarity/channel type	-	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	-	60 A	60 A
Certification status	-	Not Qualified	Not Qualified
surface mount	-	YES	YES
Terminal surface	-	MATTE TIN OVER NICKEL	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	-	GULL WING	GULL WING
Terminal location	-	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	30	30
transistor applications	-	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON
Base Number Matches	-	1	1

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