IRFR3910TRPBF datasheet, PDF - EEWORLD Datasheet

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IRFR3910TRPBF: DescriptionDrain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 16A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 115mΩ @ 10A, 10V Maximum power dissipation (Ta= 25°C): 79W Type: N-channel N-channel 100V 16A; CategoryDiscrete semiconductor The transistor; File Size391KB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRFR3910TRPBF Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 16A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 115mΩ @ 10A, 10V Maximum power dissipation (Ta= 25°C): 79W Type: N-channel N-channel 100V 16A

IRFR3910TRPBF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	LEAD FREE, PLASTIC, DPAK-3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	15 weeks
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	150 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	16 A
Maximum drain current (ID)	16 A
Maximum drain-source on-resistance	0.115 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	79 W
Maximum pulsed drain current (IDM)	60 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 95079A

IRFR3910PbF

IRFU3910PbF

•

Lead-Free

www.irf.com

1

1/7/05

IRFR3910TRPBF Related Products

	IRFR3910TRPBF	IRFR3910TRRPBF	IRFR3910CPBF
Description	Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 16A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 115mΩ @ 10A, 10V Maximum power dissipation (Ta= 25°C): 79W Type: N-channel N-channel 100V 16A	Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3	MOSFET N-CH 100V 16A DPAK
Is it Rohs certified?	conform to	conform to	-
Maker	Infineon	Infineon	-
package instruction	LEAD FREE, PLASTIC, DPAK-3	LEAD FREE, PLASTIC, DPAK-3	-
Reach Compliance Code	not_compliant	compliant	-
ECCN code	EAR99	EAR99	-
Other features	AVALANCHE RATED	AVALANCHE RATED	-
Avalanche Energy Efficiency Rating (Eas)	150 mJ	150 mJ	-
Shell connection	DRAIN	DRAIN	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	100 V	100 V	-
Maximum drain current (ID)	16 A	16 A	-
Maximum drain-source on-resistance	0.115 Ω	0.115 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	TO-252AA	TO-252AA	-
JESD-30 code	R-PSSO-G2	R-PSSO-G2	-
JESD-609 code	e3	e3	-
Humidity sensitivity level	1	1	-
Number of components	1	1	-
Number of terminals	2	2	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	260	260	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Maximum pulsed drain current (IDM)	60 A	60 A	-
Certification status	Not Qualified	Not Qualified	-
surface mount	YES	YES	-
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier	MATTE TIN OVER NICKEL	-
Terminal form	GULL WING	GULL WING	-
Terminal location	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	30	30	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-
Base Number Matches	1	1	-

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