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DU2860U

Description
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
CategoryThe transistor   
File Size203KB,3 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Environmental Compliance
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DU2860U Overview

VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

DU2860U Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTE Connectivity
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
Maximum drain current (ID)12 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)24 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-CRFM-F4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment159 W
Minimum power gain (Gp)13 dB
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
s2zz-f
rgy==
e
-A5g
=r-
---
-=-
an
AMP
company
RF MOSFET
2
-
175
MHz
Features
Power Transistor,
6OW, 28V
DU2860U
v2.00
A
4Gl.
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
. .
Absolute Maximum Ratings at 25°C
Electrical Characteristics at 25°C
IWA-COM, Inc.
North America:
Specifications Subject to Change Without Notice.
Tel. (800) 366-2266
Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
m
Europe:
Tel. +44 (1344) 869 595
Fax +I4 (1344) 300 020
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