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PTFA212001FV4XWSA1

Description
IC FET RF LDMOS 200W H-37260-2
CategoryDiscrete semiconductor    The transistor   
File Size613KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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PTFA212001FV4XWSA1 Overview

IC FET RF LDMOS 200W H-37260-2

PTFA212001FV4XWSA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionFLANGE MOUNT, R-XDFM-F2
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandS BAND
JESD-30 codeR-XDFM-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
200 W, 2110 – 2170 MHz
Description
The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA212001E
Package H-36260-2
2-Carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2140 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-23
30
IM3 (dBc), ACPR (dBc)
-28
-33
-38
Efficiency
20
15
10
5
0
-43
-48
-53
34
36
sc
o
38
40
nt
IM3
Drain Efficiency (%)
in
ue
25
d
1 of 11
ACPR
42
44
46
48
Average Output Power (dBm)
di
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
– Discontinued Products
pr
od
uc
Features
PTFA212001F
Package H-37260-2
Thermally-enhanced packages, Pb-free and
RoHS compliant
Broadband internal matching
Typical two-carrier WCDMA performance at
2140 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 15.8 dB
- Efficiency = 28%
- Intermodulation distortion = –35.5 dBc
- Adjacent channel power = –40 dBc
Typical single-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB
- Average output power = 70 W
- Linear Gain = 15.5 dB
- Efficiency = 34%
- Adjacent channel power = –37 dBc
Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 220 W
- Efficiency = 54%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 5:1 VSWR @ 30 V,
200 W (CW) output power
*See Infineon distributor for future availability.
ts
Rev. 07, 2017-07-19

PTFA212001FV4XWSA1 Related Products

PTFA212001FV4XWSA1 PTFA212001EV4R250XTMA1 PTFA212001FV4R250XTMA1 PTFA212001EV4R0XTMA1
Description IC FET RF LDMOS 200W H-37260-2 FET RF 65V 2.14GHZ H-36260-2 IC FET RF LDMOS 200W H-37260-2 RF MOSFET LDMOS 30V H-36260-2
Maker Infineon Infineon - Infineon
package instruction FLANGE MOUNT, R-XDFM-F2 FLANGE MOUNT, R-XDFM-F2 - GREEN, H-36260-2, 2 PIN
Reach Compliance Code unknown unknown - compliant
Shell connection SOURCE SOURCE - SOURCE
Configuration SINGLE SINGLE - SINGLE
Minimum drain-source breakdown voltage 65 V 65 V - 65 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
highest frequency band S BAND S BAND - S BAND
JESD-30 code R-XDFM-F2 R-XDFM-F2 - R-CDFM-F2
Number of components 1 1 - 1
Number of terminals 2 2 - 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE
Package body material UNSPECIFIED UNSPECIFIED - CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL
surface mount YES YES - YES
Terminal form FLAT FLAT - FLAT
Terminal location DUAL DUAL - DUAL
transistor applications AMPLIFIER AMPLIFIER - AMPLIFIER
Transistor component materials SILICON SILICON - SILICON
Base Number Matches 1 1 - 1
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