SE15PB, SE15PD, SE15PG, SE15PJ
www.vishay.com
Vishay General Semiconductor
Surface Mount ESD Capability Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
eSMP
®
Series
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop
• Typical I
R
less than 0.1 μA
• ESD capability
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
DO-220AA (SMP)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
R
V
F
at I
F
= 1.0 A
T
J
max.
Package
Diode variations
1.5 A
100 V, 200 V, 400 V, 600 V
5 μA
0.868 V
175 °C
DO-220AA (SMP)
Single die
MECHANICAL DATA
Case:
DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
General purpose, polarity protection, and rail-to-rail
protection in both consumer and automotive applications.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Max. repetitive peak reverse voltage
Average forward current (fig. 1)
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
SE15PB
15B
100
SE15PD
15D
200
1.5
30
- 55 to + 175
SE15PG
15G
400
SE15PJ
15J
600
V
A
A
°C
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Max. instantaneous
forward voltage
Max. reverse current
Max. reverse recovery time
Typical junction capacitance
TEST CONDITIONS
I
F
= 1.5 A
Rated V
R
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
V
F (1)
I
R (2)
t
rr
C
J
TYP.
0.968
0.868
-
5.4
900
9.5
MAX.
1.05
0.95
5.0
50
-
-
UNIT
V
μA
ns
pF
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
Revision: 14-Aug-13
Document Number: 89025
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SE15PB, SE15PD, SE15PG, SE15PJ
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °c unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
R
JL
R
JC
(1)
(1)
SE15PB
SE15PD
105
25
30
SE15PG
SE15PJ
UNIT
°C/W
Note
(1)
Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. R
JL
- is
measured at the terminal of cathode band. R
JC
is measured at the top center of the body.
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(T
A
= 25 °C unless otherwise noted)
STANDARD
AEC-Q101-001
AEC-Q101-002
JESD22-A114
JESD22-A115
IEC 61000-4-2
(2)
TEST TYPE
Human body model (contact mode)
Machine model (contact mode)
Human body model (contact mode)
Machine model (contact mode)
Human body model (contact mode)
Human body model (air-discharge mode)
(1)
TEST CONDITIONS
C = 100 pF, R = 1.5 k
C = 200 pF, R = 0
C = 100 pF, R = 1.5 k
C = 200 pF, R = 0
C = 150 pF, R = 330
C = 150 pF, R = 330
SYMBOL
CLASS
H3B
M4
3B
C
4
4
VALUE
> 8 kV
> 400 V
> 8 kV
> 400 V
> 8 kV
> 15 kV
V
C
Notes
Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV
(2)
System ESD standard
(1)
ORDERING INFORMATION
(Example)
PREFERRED P/N
SE15PJ-M3/84A
SE15PJ-M3/85A
SE15PJHM3/84A
(1)
SE15PJHM3/85A
(1)
(1)
UNIT WEIGHT (g)
0.024
0.024
0.024
0.024
PREFERRED PACKAGE CODE
84A
85A
84A
85A
BASE QUANTITY
3000
10 000
3000
10 000
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
Automotive grade
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
C
unless otherwise noted)
2.0
Resistive or Inductive Load
1.6
1.8
D = 0.5
D = 0.3
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
D = t
p
/T
t
p
T
D = 0.2
D = 0.1
D = 1.0
D = 0.8
Average Forward Current (A)
1.5
1.0
0.5
T
L
Measured
at the Cathode Band Terminal
0
Lead Temperature (°C)
Average Power Loss (W)
Average Forward Current (A)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 14-Aug-13
Document Number: 89025
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SE15PB, SE15PD, SE15PG, SE15PJ
www.vishay.com
Vishay General Semiconductor
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
10
Instantaneous Forward Current (A)
T
J
= 150 °C
Junction Capacitance (pF)
1.3
1.4
1.5
T
J
= 175 °C
1
T
J
= 25 °C
10
0.1
0.5
1
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Fig. 3 - Forward Power Loss Characteristics
100
Fig. 5 - Typical Instantaneous Forward Characteristics
Instantaneous Reverse Current (µA)
T
J
= 175 °C
10
T
J
= 150 °C
1
0.1
T
J
= 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse
Voltage
(%)
Fig. 4 - Typical Instantaneous Forward Characteristics
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-220AA (SMP)
Cathode Band
0.012 (0.30) REF.
0.086 (2.18)
0.074 (1.88)
0.053 (1.35)
0.041 (1.05)
0.036 (0.91)
0.024 (0.61)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.100
(2.54)
0.025 0.030
(0.635) (0.762)
0.050
(1.27)
Revision: 14-Aug-13
Document Number: 89025
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 08-Feb-17
1
Document Number: 91000
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