P4KE SERIES
Taiwan Semiconductor
CREAT BY ART
400W, 6.8V - 440V Transient Voltage Suppressor
FEATURES
- Excellent clamping capability
- Low dynamic impedance
- 400W surge capability at 10 / 1000
μs
waveform
- Fast response time: Typically less than
1.0ps from 0 volt to V
BR
for unidirectional
and 5.0ns for bidirectional
- Typical I
R
less than 1μA above 10V
- UL recognized file # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DO-204AL (DO-41)
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound: UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight:
0.3g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25
o
C, tp=1ms (Note 1)
Steady state power dissipation at T
L
=75°C
lead lengths .375", 9.5mm (Note 2)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load (Note 3)
Maximum instantaneous forward voltage at 25 A for
Unidirectional only (Note 4)
Operating junction temperature range
Storage temperature range
Note 2: Mounted on 5 x 5 mm copper pads to each terminal
Note 3: 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
Note 4: V
F
=3.5V for devices of V
BR
≦200V
and V
F
=6.5V max. for device V
BR
>200V
SYMBOL
P
PK
P
D
I
FSM
V
F
T
J
T
STG
VALUE
400
1
40
3.5 / 6.5
- 55 to +175
- 55 to +175
UNIT
W
W
A
V
°C
°C
Note 1: Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C per fig. 2
Devices for bipolar applications
1. For bidirectional use C or CA suffix for types P4KE6.8 - types P4KE440
2. Electrical characteristics apply in both directions
Version: M1602
P4KE SERIES
Taiwan Semiconductor
CREAT BY ART
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING CODE
A0
P4KExxxx
(Note 1)
H
R0
R1
B0
Note 1: "xxxx" defines voltage from 6.8V (P4KE6.8) to 440V (P4KE440)
G
PACKING CODE
SUFFIX
PACKAGE
DO-41
DO-41
DO-41
DO-41
PACKING
3,000 / Ammo box (52mm taping)
5,000 / 13" Paper reel
5,000 / 13" Paper reel (Reverse)
1,000 / Bulk packing
EXAMPLE
EXAMPLE
PART NO.
P4KE56AHA0G
PART NO.
P4KE56A
PART NO.
SUFFIX
H
PACKING CODE
A0
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25
o
C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
Non-repetitive
pulse waveform
shown in fig.3
1.25
PM(
AV
), STEADY STATE POWER
DISSIPATION,WATTS
1
0.75
0.5
0.25
0
0
25
50
75
100
125
150
175
200
With heat sink
FIG.2 STEADY STATE POWER DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
10
Without heat sink
1
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (uS)
T
L
, LEAD TEMPERATURE (
o
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
IFSM, PEAK FORWARD SURGE CURRENT (A)
50
8.3ms single half sine wave
unidirectional only
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
tr=10μs
Peak value
I
PPM
40
Half value-I
PPM
/2
10/1000
μs,
waveform
as defined by R.E.A.
30
20
10
1
1.5
2
t, TIME ms
2.5
3
3.5
4
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
Version: M1602
P4KE SERIES
Taiwan Semiconductor
CREAT BY ART
General
Part
Number
Nominal
Voltage
Breakdown Voltage
(Note 1)
V
BR
(V)
Min
P4KE62
P4KE62A
P4KE68
P4KE68A
P4KE75
P4KE75A
P4KE82
P4KE82A
P4KE91
P4KE91A
P4KE100
P4KE100A
P4KE110
P4KE110A
P4KE120
P4KE120A
P4KE130
P4KE130A
P4KE150
P4KE150A
P4KE160
P4KE160A
P4KE170
P4KE170A
P4KE180
P4KE180A
P4KE200
P4KE200A
P4KE220
P4KE220A
P4KE250
P4KE250A
P4KE300
P4KE300A
P4KE350
P4KE350A
P4KE400
P4KE400A
P4KE440
P4KE440A
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
R
limit is doubled.
4. All terms and symbols are consistent with ANSI/IEEE C62.35.
Version: M1602
62
62
68
68
75
75
82
82
91
91
100
100
110
110
120
120
130
130
150
150
160
160
170
170
180
180
200
200
220
220
250
250
300
300
350
350
400
400
440
440
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90
95
99
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
332
360
380
396
418
(V)
Max
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462.0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Test
Current
I
T
(mA)
Stand-Off
Voltage
V
WM
(V)
Maximum
@ V
WM
I
R
(μA)
Maximum
Current
I
PPM
(A)
(Note 2)
4.7
5.0
4.2
4.5
3.8
4.0
3.5
3.7
3.2
3.3
2.9
3.0
2.6
2.7
2.4
2.5
2.2
2.3
1.9
2.0
1.8
1.9
1.7
1.8
1.6
1.7
1.4
1.51
1.20
1.30
1.10
1.20
0.97
1.00
0.83
0.87
0.73
0.76
0.66
0.69
89
85
98
92
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
600
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Maximum
@ I
PPM
Vc
(V)
Maximum
Coefficient
of V
BR
(%/
o
C)
Reverse Leakage Peak Pulse Clamping Voltage Temperature
Microchip MCU
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