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1N4002GP

Description
1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size60KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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1N4002GP Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-41

1N4001GP THRU 1N4007GP
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage -
50 to 1000 Volts
D
*
DO-204AL
Forward Current -
1.0 Ampere
FEATURES
Plastic package has
Underwriters
Laboratory Flammability
Classification 94V-0
High temperature metallurgically
bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
1.0 Ampere operation at T
A
=75°C with no thermal
runaway
Typical I
R
less than 0.1µA
High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
N
T
E
P
A
T
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
E
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
NOTE:
Lead diameter is
0.026 (0.66)
0.023 (0.58)
for suffix "E" part numbers
MECHANICAL DATA
Case:
JEDEC DO-204AL molded plastic over glass body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 ounce, 0.3 gram
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306
®
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
1N
1N
4001GP 4002GP
1N
4003GP
1N
4004GP
1N
1N
4005GP 4006GP
1N
4007GP UNITS
* Maximum repetitive peak reverse voltage
* Maximum RMS voltage
* Maximum DC blocking voltage
* Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=75°C
* Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
* Maximum full load reverse current, full cycle
average 0.375" (9.5mm) lead length T
A
= 75°C
* Maximum DC reverse current
at rated DC blocking voltage
Typical reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
* Operating junction and storage temperature range
T
A
=25°C
T
A
=125°C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amp
I
FSM
V
F
I
R(AV)
I
R
t
rr
C
J
R
ΘJA
R
ΘJL
T
J
, T
STG
30.0
1.1
30.0
5.0
50.0
2.0
8.0
55.0
25.0
-65 to +175
Amps
Volts
µA
µA
µs
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
= 0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted
*JEDEC registered values
4/98

1N4002GP Related Products

1N4002GP 1N4001GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP
Description 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL

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