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1N4003

Description
1 A, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size46KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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1N4003 Overview

1 A, SILICON, SIGNAL DIODE, DO-41

1N4003 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
LESHAN RADIO COMPANY, LTD.
1N4001 – 1N4007
1A
1A GENERAL DIODES
Maximum Average
TYPE
Maximum
Peak Reverse
Voltage
PRV
V
PK
Rectified Current
@ Half-Wave
Resistive Load 60Hz
I
O
@ T
L
A
AV
ºC
Maximum
Forward Peak
Surge Current @
8.3ms Superimposed
I
FM
(Surge)
A
PK
Maximum
Reverse
Current @ PRV
@ T
A
=25ºC
I
R
Maximum
Forward
Voltage
@ T
A
=25ºC
I
FM
A
PK
V
FM
V
PK
Package
Dimensions
µAdc
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
50
100
200
400
600
800
1000
1.0
75
30
5.0
1.0
1.1
DO – 41
1.0(25.4)
MIN
.205(5.2)
.166(4.2)
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
DIA
.107(2.7) DIA
.080(2.0)
DO – 41
22A–1/2

1N4003 Related Products

1N4003 1N4001 1N4004 1N4005 1N4006
Description 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker LRC LRC LRC LRC LRC
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 ROHS COMPLIANT, PLASTIC PACKAGE-2 O-PALF-W2
Reach Compliance Code unknown unknow unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JEDEC-95 code DO-41 DO-41 DO-41 DO-41 DO-41
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -50 °C -50 °C -50 °C -50 °C -50 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 200 V 50 V 400 V 600 V 800 V
surface mount NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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