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BSP123L6327HTSA1

Description
MOSFET N-CH 100V 370MA SOT223
CategoryDiscrete semiconductor    The transistor   
File Size182KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSP123L6327HTSA1 Overview

MOSFET N-CH 100V 370MA SOT223

BSP123L6327HTSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)0.37 A
Maximum drain-source on-resistance6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)1.48 A
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Base Number Matches1
Rev. 1.5
BSP123
SIPMOS
®
Small-Signal-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
100
6
0.37
PG-SOT223
V
A
Pb-free lead plating; RoHS compliant
Qualified according to AEC Q101
Type
BSP123
BSP123
Package
PG-SOT223
PG-SOT223
Tape and Reel Information
L6433: 4000 pcs/reel
L6327: 1000 pcs/reel
Marking Packaging
BSP123
BSP123
Non dry
Non dry
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T
A
=25°C
T
A
=70°C
Value
0.37
0.3
Unit
A
I
D
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
T
j ,
T
stg
1.48
6
±20
0 (<250V)
1.79
-55... +150
55/150/56
W
°C
kV/µs
V
Reverse diode dv/dt
I
S
=0.37A,
V
DS
=80V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
ESD Class JESD22-A114-HBM
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2010-06-22

BSP123L6327HTSA1 Related Products

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Description MOSFET N-CH 100V 370MA SOT223 Power Field-Effect Transistor, 0.37A I(D), 100V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 mosfet N-CH 100v 370ma sot223
Is it Rohs certified? conform to conform to -
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 -
Contacts 4 4 -
Reach Compliance Code unknown compli -
ECCN code EAR99 EAR99 -
Other features LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE -
Shell connection DRAIN DRAIN -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 100 V 100 V -
Maximum drain current (ID) 0.37 A 0.37 A -
Maximum drain-source on-resistance 6 Ω 6 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JESD-30 code R-PDSO-G4 R-PDSO-G4 -
JESD-609 code e3 e3 -
Number of components 1 1 -
Number of terminals 4 4 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum pulsed drain current (IDM) 1.48 A 1.48 A -
surface mount YES YES -
Terminal surface MATTE TIN MATTE TIN -
Terminal form GULL WING GULL WING -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature 40 NOT SPECIFIED -
Transistor component materials SILICON SILICON -
Base Number Matches 1 1 -
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