Rev. 1.5
BSP123
SIPMOS
®
Small-Signal-Transistor
Feature
•
N-Channel
•
Enhancement mode
•
Logic Level
•
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
100
6
0.37
PG-SOT223
V
Ω
A
•
Pb-free lead plating; RoHS compliant
•
Qualified according to AEC Q101
Type
BSP123
BSP123
Package
PG-SOT223
PG-SOT223
Tape and Reel Information
L6433: 4000 pcs/reel
L6327: 1000 pcs/reel
Marking Packaging
BSP123
BSP123
Non dry
Non dry
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T
A
=25°C
T
A
=70°C
Value
0.37
0.3
Unit
A
I
D
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
T
j ,
T
stg
1.48
6
±20
0 (<250V)
1.79
-55... +150
55/150/56
W
°C
kV/µs
V
Reverse diode dv/dt
I
S
=0.37A,
V
DS
=80V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
ESD Class JESD22-A114-HBM
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2010-06-22
Rev. 1.5
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
BSP123
Symbol
min.
R
thJS
R
thJA
-
-
-
Values
typ.
15
max.
25
Unit
K/W
100
51
115
70
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
R
DS(on)
-
-
-
-
100
0.8
Values
typ.
-
1.4
max.
-
1.8
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=50µA
Zero gate voltage drain current
V
DS
=100V,
V
GS
=0,
T
j
=25°C
V
DS
=100V,
V
GS
=0,
T
j
=150°C
µA
-
-
-
14
4.8
3.5
0.01
5
10
30
10
6
nA
Ω
Gate-source leakage current
V
GS
=20V,
V
DS
=0
Drain-source on-state resistance
V
GS
=2.8V,
I
D
=15mA
Drain-source on-state resistance
V
GS
=4.5V,
I
D
=0.3A
Drain-source on-state resistance
V
GS
=10V,
I
D
=0.37A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2010-06-22
Rev. 1.5
BSP123
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
DD
=80V,
I
D
=0.37A,
V
GS
=0 to 10V
V
DD
=80V,
I
D
=0.37A
Symbol
Conditions
min.
Values
typ.
0.27
56
9
3.5
3.3
3.2
8.7
9.4
0.09
0.8
1.6
3.61
Unit
max.
-
70
11.3
4.4
5
4.8
13
14
0.13
1.2
2.4
-
V
nC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=0.3A
V
GS
=0,
V
DS
=25V,
f=1MHz
0.13
-
-
-
-
-
-
-
-
-
-
-
S
pF
V
DD
=50V,
V
GS
=10V,
I
D
=0.37A,
R
G
=6Ω
ns
V
(plateau)
V
DD
=80V,
I
D
= 0.37 A
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsedI
SM
Inverse diode forward voltage
V
SD
Reverse recovery time
t
rr
Reverse recovery charge
Q
rr
V
GS
=0,
I
F
=
I
S
V
R
=50V,
I
F =
l
S
,
di
F
/dt=100A/µs
I
S
T
A
=25°C
-
-
-
-
-
-
-
0.9
52.7
17.8
0.37
1.48
1.2
79
27
A
V
ns
nC
Page 3
2010-06-22
Rev. 1.5
1 Power dissipation
P
tot
=
f
(T
A
)
1.9
BSP123
BSP123
2 Drain current
I
D
=
f
(T
A
)
parameter:
V
GS
≥
10 V
0.4
BSP123
W
1.6
1.4
A
0.32
0.28
P
tot
I
D
°C
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
160
0.24
0.2
0.16
0.12
0.08
0.04
0
0
20
40
60
80
100
120
T
A
°C
160
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
10
1
BSP123
4 Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
K/W
10
3
BSP123
A
t
p = 21.0ms
10
2
Z
thJA
I
D
DS
(on
)
=
V
DS
/
I
10
0
10
1
D
R
10
0
D = 0.50
0.20
0.10
0.05
0.02
0.01
single pulse
10
-1
10
-1
10
DC
10
-2 0
10
10
1
-2
10
2
V
10
3
10
-3 -5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
1
s
10
3
V
DS
Page 4
t
p
2010-06-2
Rev. 1.5
5 Typ. output characteristic
I
D
=
f
(V
DS
)
parameter:
T
j
= 25 °C,
V
GS
0.7
BSP123
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
T
j
= 25 °C,
V
GS
20
A
0.6
0.55
0.5
I
D
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
10V
5V
4.5V
4.1V
3.9V
3.7V
3.5V
3.1V
2.9V
2.3V
Ω
16
14
12
10
8
6
4
2
2.3V
2.9V
3.1V
3.5V
3.7V
3.9V
4.1V
4.5V
5.0V
10V
R
DS(on)
V
0.5
1
1.5
2
2.5
3
3.5
4
5
0
0
0.1
0.2
0.3
0.4
0.5
A
0.7
V
DS
I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
≥
2 x
I
D
x
R
DS(on)max
parameter:
T
j
= 25 °C
0.7
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter:
T
j
= 25 °C
0.4
A
S
0.5
0.3
g
fs
0.4
0.3
0.2
0.1
0
0
I
D
0.25
0.2
0.15
0.1
0.05
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
0.1
0.2
0.3
0.4
0.5
A
0.7
V
GS
Page 5
I
D
2010-06-22
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