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2SA2161G0L

Description
TRANS PNP 12V 0.5A SSMINI3P
Categorysemiconductor    Discrete semiconductor   
File Size223KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SA2161G0L Overview

TRANS PNP 12V 0.5A SSMINI3P

2SA2161G0L Parametric

Parameter NameAttribute value
Transistor typePNP
Current - Collector (Ic) (Maximum)500mA
Voltage - collector-emitter breakdown (maximum)12V
Vce saturation value (maximum value) when different Ib,Ic250mV @ 10mA,200mA
Current - collector cutoff (maximum)100nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)270 @ 10mA,2V
Power - Max125mW
Frequency - Transition200MHz
Operating temperature125°C(TJ)
Installation typesurface mount
Package/casingSC-89,SOT-490
Supplier device packagingSS mini 3-F3
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA2161G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6037G
Features
Package
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
f
T
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Di
Forward current transfer ratio
e/
Collector-emitter saturation voltage
Transition frequency
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
M
ain
te
Collector output capacitance
(Common base, input open circuited)
Publication date: May 2007
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Rating
−15
−12
−5
−1
Unit
V
V
V
−500
125
125
mA
A
mW
°C
°C
T
stg
−55
to
+125
Conditions
Min
−15
−5
−12
Typ
Max
Unit
V
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
V
V
CB
= −15
V, I
E
=
0
0.1
680
µA
V
CE
= −2
V, I
C
= −10
mA
270
V
CE(sat)
C
ob
I
C
= −200
mA, I
B
= −10
mA
−250
mV
pF
V
CB
= −2
V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
200
4.5
MHz
SJC00383AED
na
nc
M
Di ain
sc te
on na
tin nc
ue e/
d
Low collector-emitter saturation voltage V
CE(sat)
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Code
SSMini3-F3
Marking Symbol: 2U
Pin Name
1. Base
2. Emitter
3. Collector
sc
on
1

2SA2161G0L Related Products

2SA2161G0L 2SA2161G
Description TRANS PNP 12V 0.5A SSMINI3P Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN

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