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2SA2161G

Description
Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size223KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SA2161G Overview

Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN

2SA2161G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)270
JESD-30 codeR-PDSO-F3
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA2161G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6037G
Features
Package
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
f
T
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Di
Forward current transfer ratio
e/
Collector-emitter saturation voltage
Transition frequency
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
M
ain
te
Collector output capacitance
(Common base, input open circuited)
Publication date: May 2007
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Rating
−15
−12
−5
−1
Unit
V
V
V
−500
125
125
mA
A
mW
°C
°C
T
stg
−55
to
+125
Conditions
Min
−15
−5
−12
Typ
Max
Unit
V
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
V
V
CB
= −15
V, I
E
=
0
0.1
680
µA
V
CE
= −2
V, I
C
= −10
mA
270
V
CE(sat)
C
ob
I
C
= −200
mA, I
B
= −10
mA
−250
mV
pF
V
CB
= −2
V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
200
4.5
MHz
SJC00383AED
na
nc
M
Di ain
sc te
on na
tin nc
ue e/
d
Low collector-emitter saturation voltage V
CE(sat)
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Code
SSMini3-F3
Marking Symbol: 2U
Pin Name
1. Base
2. Emitter
3. Collector
sc
on
1

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Description Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN TRANS PNP 12V 0.5A SSMINI3P

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