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MA3J142DGL

Description
DIODE ARRAY GP 80V 100MA SMINI3
Categorysemiconductor    Discrete semiconductor   
File Size218KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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MA3J142DGL Overview

DIODE ARRAY GP 80V 100MA SMINI3

MA3J142DGL Parametric

Parameter NameAttribute value
Diode configuration1 pair of common anodes
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)80V
Current - average rectification (Io) (per diode)100mA(DC)
Voltage at different If - Forward (Vf1.2V @ 100mA
speedSmall signal =< 200mA (Io), any speed
Reverse recovery time (trr)10ns
Current at different Vr - Reverse leakage current100nA @ 75V
Operating Temperature - Junction150°C (maximum)
Installation typesurface mount
Package/casingSC-85
Supplier device packagingS mini 3-F2
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3J142D
(MA142WA)
, MA3J142E
(MA142WK)
Silicon epitaxial planar type
0.3
+0.1
–0
Unit: mm
0.15
+0.1
–0.05
For switching circuits
Features
Two isolated elements contained in one package, allowing high-
density mounting
3
1.25
±0.1
2.1
±0.1
M
ain
Di
sc te
on na
tin nc
ue e/
d
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
0.9
±0.1
Parameter
Symbol
V
R
I
F
0 to 0.1
Maximum peak reverse voltage
Forward current
Single
V
RM
80
V
100
150
mA
Double
Single
Peak forward
current
I
FM
225
340
mA
EIAJ: SC-79
SMini3-F1 Package
MA3J142D MA3J142E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode
Cathode
Double
Single
Non-repetitive peak
forward surge current
*
I
FSM
T
j
500
750
mA
°C
Marking Symbol:
MA3J142D: MO
MA3J142E: MU
Double
Internal Connection
3
Junction temperature
Storage temperature
150
3
T
stg
−55
to
+150
°C
Note) *: t
=
1 s
1
Electrical Characteristics
T
a
=
25°C
±
3°C
D
2
1
E
ue
Parameter
Symbol
V
F
I
R
Conditions
Min
Typ
Max
1.2
(0.15)
Reverse voltage
Forward voltage
Reverse voltage
Reverse current
isc
V
R
C
t
t
rr
an
MA3J142E
ce
Terminal capacitance
MA3J142D
Reverse recovery time
*
MA3J142D
MA3J142E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Publication date: March 2004
Wave Form Analyzer
(SAS-8130)
R
i
=
50
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Rating
80
Unit
V
2
Absolute Maximum Ratings
T
a
=
25°C
tin
I
F
=
100 mA
I
R
=
100
µA
V
R
=
75 V
(0.425)
Unit
V
on
80
V
/D
100
15
2
nA
pF
V
R
=
0 V, f
=
1 MHz
Ma
int
en
I
F
=
10 mA, V
R
=
6 V
10
3
ns
I
rr
=
0.1 I
R
, R
L
=
100
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part numbers in the parenthesis show conventional part number.
SKF00018BED
1

MA3J142DGL Related Products

MA3J142DGL MA3J142EGL MA3J142D0L MA3J142E0L
Description DIODE ARRAY GP 80V 100MA SMINI3 DIODE ARRAY GP 80V 100MA SMINI3 DIODE ARRAY GP 80V 100MA SMINI3 DIODE ARRAY GP 80V 100MA SMINI3
Diode configuration 1 pair of common anodes 1 pair of common cathodes 1 pair of common anodes 1 pair of common cathodes
Diode type standard standard standard standard
Voltage - DC Reverse (Vr) (Maximum) 80V 80V 80V 80V
Current - average rectification (Io) (per diode) 100mA(DC) 100mA(DC) 100mA(DC) 100mA(DC)
Voltage at different If - Forward (Vf 1.2V @ 100mA 1.2V @ 100mA 1.2V @ 100mA 1.2V @ 100mA
speed Small signal =< 200mA (Io), any speed Small signal =< 200mA (Io), any speed Small signal =< 200mA (Io), any speed Small signal =< 200mA (Io), any speed
Reverse recovery time (trr) 10ns 3ns 10ns 3ns
Current at different Vr - Reverse leakage current 100nA @ 75V 100nA @ 75V 100nA @ 75V 100nA @ 75V
Operating Temperature - Junction 150°C (maximum) 150°C (maximum) 150°C (maximum) 150°C (maximum)
Installation type surface mount surface mount surface mount surface mount
Package/casing SC-85 SC-85 SC-85 SC-85
Supplier device packaging S mini 3-F2 S mini 3-F2 SMini3-F1 SMini3-F1

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