FDI025N06 N-Channel PowerTrench® MOSFET
June 2008
FDI025N06
60V, 265A, 2.5mΩ
Features
N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
®
tm
• R
DS(on)
= 1.9mΩ ( Typ.) @ V
GS
= 10V, I
D
= 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
DS(on)
• High power and current handling capability
• RoHS compliant
Application
• DC to DC convertors / Synchronous Rectification
D
TO-262
G D S
FDI Series
G
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
- Derate above 25 C
o
o
Parameter
Ratings
60
±20
o
Units
V
V
A
A
A
mJ
V/ns
W
W/
o
C
o
o
-Continuous (T
C
= 25 C)
-Continuous (T
C
= 100 C)
- Pulsed
(Note 1)
(Note 2)
(Note 3)
o
265*
190*
1060
2531
3.5
395
2.6
-55 to +175
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
C
*
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
Ratings
0.38
0.5
62.5
o
C/W
Units
©2008 Fairchild Semiconductor Corporation
FDI025N06 Rev. A
1
www.fairchildsemi.com
FDI025N06 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
T
C
= 25
o
C unless otherwise noted
Device Marking
FDI025N06
Device
FDI025N06
Package
TO-262
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I
D
= 250µA, V
GS
= 0V, T
C
= 25
o
C
I
D
= 250µA, Referenced to 25
o
C
V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
C
= 150 C
V
GS
= ±20V, V
DS
= 0V
o
60
-
-
-
-
-
0.04
-
-
-
-
-
1
500
±100
V
V/
o
C
µA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V, I
D
= 75A
V
DS
= 10V, I
D
= 75A
(Note 4)
2.5
-
-
3.5
1.9
200
4.5
2.5
-
V
mΩ
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DS
= 48V, I
D
= 75A
V
GS
= 10V
(Note 4, 5)
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
-
-
-
-
-
11190
1610
750
174
54
50
14885
2140
1125
226
-
-
pF
pF
pF
nC
nC
nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 30V, I
D
= 75A
V
GS
= 10V, R
GEN
= 25Ω
(Note 4, 5)
-
-
-
-
134
324
348
250
278
658
706
510
ns
ns
ns
ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
SD
= 75A
V
GS
= 0V, I
SD
= 75A
dI
F
/dt = 100A/µs
(Note 4)
-
-
-
-
-
-
-
-
69
152
265
1060
1.3
-
-
A
A
V
ns
nC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.9mH, I
AS
= 75A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3: I
SD
≤
75A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4: Pulse Test: Pulse width
≤
300µs, Duty Cycle
≤
2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDI025N06 Rev. A
2
www.fairchildsemi.com
FDI025N06 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
700
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Figure 2. Transfer Characteristics
1000
*Notes:
1. V
DS
= 20V
2. 250
µ
s Pulse Test
I
D
,Drain Current[A]
100
I
D
,Drain Current[A]
100
175 C
25 C
o
o
10
*Notes:
1. 250
µ
s Pulse Test
2. T
C
= 25 C
o
10
-55 C
o
1
0.01
0.1
V
DS
,Drain-Source Voltage[V]
1
1
2
3
4
5
6
V
GS
,Gate-Source Voltage[V]
7
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
I
S
, Reverse Drain Current [A]
R
DS(ON)
[
m
Ω
]
,
Drain-Source On-Resistance
175 C
o
2.5
V
GS
= 10V
100
2.0
V
GS
= 20V
25 C
o
10
*Notes:
1. V
GS
= 0V
2. 250
µ
s Pulse Test
1.5
*Note: T
C
= 25 C
o
1.0
0
100
200
300
I
D
, Drain Current [A]
400
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
16000
C
iss
*Note:
1. V
GS
= 0V
2. f = 1MHz
Figure 6. Gate Charge Characteristics
10
V
GS
, Gate-Source Voltage [V]
V
DS
= 15V
V
DS
= 30V
V
DS
= 48V
8
12000
Capacitances [pF]
Ciss = Cgs + Cgd
(
Cds = shorted
)
Coss = Cds + Cgd
Crss = Cgd
6
C
oss
8000
4
4000
C
rss
2
*Note: I
D
= 75A
0
0.1
0
1
10
V
DS
, Drain-Source Voltage [V]
60
0
40
80
120
160
Q
g
, Total Gate Charge [nC]
200
FDI025N06 Rev. A
3
www.fairchildsemi.com
FDI025N06 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.15
Figure 8. On-Resistance Variation
vs. Temperature
2.0
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
1.10
1.6
1.05
1.2
1.00
*Notes:
1. V
GS
= 0V
2. I
D
= 10mA
0.8
0.95
*Notes:
1. V
GS
= 10V
2. I
D
= 75A
0.90
-100
-50
0
50
100
150
o
T
J
, Junction Temperature
[
C
]
200
0.4
-100
-50
0
50
100
150
o
T
J
, Junction Temperature
[
C
]
200
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
300
1000
10
µ
s
250
I
D
, Drain Current [A]
200
150
100
50
0
25
I
D
, Drain Current [A]
100
100
µ
s
1ms
10ms
DC
10
Operation in This Area
is Limited by R
DS(on)
*Notes:
Limited by package
1
1. T
C
= 25 C
2. T
J
= 175 C
3. Single Pulse
o
o
0.1
1
10
V
DS
, Drain-Source Voltage [V]
100
50
75
100
125
150
o
T
C
, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
1
Thermal Response
[
Z
θ
JC
]
0.5
0.1
0.2
0.1
0.05
0.02
0.01
Single pulse
P
DM
t
1
t
2
o
*Notes:
0.01
10
-4
-3
-2
1. Z
θ
JC
(t) = 0.38 C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
0.005
-5
10
10
10
10
Rectangular Pulse Duration [sec]
-1
1
10
FDI025N06 Rev. A
4
www.fairchildsemi.com
FDI025N06 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDI025N06 Rev. A
5
www.fairchildsemi.com
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