FDD7030BL/FDU7030BL
June 2003
FDD7030BL/FDU7030BL
30V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
, fast switching speed and
extremely low R
DS(ON)
in a small package.
Features
•
56 A, 30 V
R
DS(ON)
= 9.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 13 mΩ @ V
GS
= 4.5 V
•
Low gate charge
•
Fast Switching
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
DC/DC converter
•
Motor Drives
D
D
G
S
I-PAK
(TO-251AA)
G D S
G
D-PAK
TO-252
(TO-252)
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
T
A
=25 C unless otherwise noted
o
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C
@T
A
=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
30
±20
56
14
100
60
2.8
1.3
–55 to +175
Units
V
V
A
P
D
Power Dissipation
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.5
45
96
°C/W
Package Marking and Ordering Information
Device Marking
FDD7030BL
FDU7030BL
Device
FDD7030BL
FDU7030BL
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
©2003
Fairchild Semiconductor Corp.
FDD7030BL/FDU7030BL Rev CW)
FDD7030BL/FDU7030BL
Electrical Characteristics
Symbol
E
AS
I
AS
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Test Conditions
Single Pulse, V
DD
= 15 V, I
D
= 14A
Min
Typ
Max Units
174
14
mJ
A
Drain-Source Avalanche Ratings
(Note 2)
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
V
GS
= 0 V,
I
D
= 250
µA
30
26
1
±100
V
mV/°C
µA
nA
I
D
= 250
µA,Referenced
to 25°C
V
DS
= 24 V,
V
GS
=
±20
V,
V
GS
= 0 V
V
DS
= 0 V
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 250
µA
I
D
= 250
µA,Referenced
to 25°C
V
GS
= 10 V,
I
D
= 14 A
V
GS
= 4.5 V, I
D
= 12 A
V
GS
= 10 V, I
D
= 14 A,T
J
=125°C
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 10 V,
I
D
= 14 A
1
1.8
–5
7.5
9.6
11
3
V
mV/°C
mΩ
9.5
13
16
I
D(on)
g
FS
50
56
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
1425
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
350
150
1.3
pF
pF
pF
pF
V
OSC
= 15 mV, f = 1.0 MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
9
31
13
14
V
DS
= 15V,
V
GS
= 5 V
I
D
= 14 A,
4
5
20
18
50
23
20
ns
ns
ns
ns
nC
nC
nC
FDD7030BL/FDU7030BL Rev. B(W)
FDD7030BL/FDU7030BL
Electrical Characteristics
Symbol
I
S
V
SD
t
rr
Q
rr
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
2.3
A
V
nS
nC
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V, I
S
= 2.3 A
(Note 2)
I
F
= 14 A, d
iF
/d
t
= 100 A/µs
0.74
23
11
1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
= 45°C/W when mounted on a
1in
2
pad of 2 oz copper
b) R
θJA
= 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
P
D
R
DS(ON)
3.
Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
FDD7030BL/FDU7030BL Rev. B(W)
FDD7030BL/FDU7030BL
Typical Characteristics
60
3
3.5V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
=10V
4.0V
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
0.5
1
1.5
2
2.5
V
GS
= 3.0V
50
I
D
, DRAIN CURRENT (A)
6.0V
4.5V
40
30
4.0V
4.5V
5.0V
6.0V
10V
20
3.0V
10
0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
10
20
30
40
50
60
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.03
R
DS(ON)
, ON-RESISTANCE (OHM)
1.8
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 14A
V
GS
= 10V
I
D
= 7A
0.025
0.02
T
A
= 125
o
C
0.015
0.01
T
A
= 25
o
C
0.005
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature
60
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
100
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
50
I
D
, DRAIN CURRENT (A)
V
GS
= 0V
10
T
A
= 125
o
C
40
1
0.1
0.01
0.001
25
o
C
-55
o
C
30
T
A
=125
o
C
20
25
o
C
10
-55
o
C
0
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD7030BL/FDU7030BL Rev. B(W)
FDD7030BL/FDU7030BL
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 14A
8
V
DS
= 10V
20V
6
15V
2000
f = 1MHz
V
GS
= 0 V
1600
CAPACITANCE (pF)
C
ISS
1200
4
800
C
OSS
2
400
C
RSS
0
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
0
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
1000
P(pk), PEAK TRANSIENT POWER (W)
100
Figure 8. Capacitance Characteristics
I
D
, DRAIN CURRENT (A)
100
1ms
R
DS(ON)
LIMIT
10
10s
DC
V
GS
= 10V
SINGLE PULSE
R
θJA
= 96
o
C/W
T
A
= 25
o
C
0.01
0.01
0.1
1
10
10ms
100ms
1s
100µs
80
SINGLE PULSE
R
θJA
= 96°C/W
T
A
= 25°C
60
1
40
0.1
20
100
0
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.0
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 96 °C/W
P(pk)
t
1
t
2
SINGLE PULSE
0.01
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD7030BL/FDU7030BL Rev. B(W)
京公网安备 11010802033920号
EEWORLD
