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FQB3N60CTM

Description
MOSFET N-CH 600V 3A D2PAK
Categorysemiconductor    Discrete semiconductor   
File Size823KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FQB3N60CTM Overview

MOSFET N-CH 600V 3A D2PAK

FQB3N60CTM Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)600V
Current - Continuous Drain (Id) at 25°C3A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs3.4 ohms @ 1.5A, 10V
Vgs (th) (maximum value) when different Id4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)14nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)565pF @ 25V
FET function-
Power dissipation (maximum)75W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingD²PAK(TO-263AB)
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB
FQB3N60C 600V N-Channel MOSFET
May 2006
QFET
FQB3N60C
600V N-Channel MOSFET
Features
• 3A, 600V, R
DS(on)
= 3.4Ω @ V
GS
= 10 V
• Low gate charge ( typical 10.5 nC)
• Low C
rss
( typical 5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
D
D
G
S
D
2
-PAK
FQB Series
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FQB3N60C
600
3
1.8
12
±30
150
3
7.5
4.5
75
0.62
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
*
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
1.67
40
62.5
Unit
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation
FQB3N60C REV. A1
1
www.fairchildsemi.com
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