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FQPF6N40CF

Description
MOSFET N-CH 400V 6A TO-220F
Categorysemiconductor    Discrete semiconductor   
File Size808KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FQPF6N40CF Overview

MOSFET N-CH 400V 6A TO-220F

FQPF6N40CF Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)400V
Current - Continuous Drain (Id) at 25°C6A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs1 ohm @ 3A, 10V
Vgs (th) (maximum value) when different Id4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)20nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)625pF @ 25V
FET function-
Power dissipation (maximum)38W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-220F
Package/casingTO-220-3 whole package
FQP6N40C / FQPF6N40C
N-Channel MOSFET
March 2013
N-Channel QFET MOSFET
400
V,
6.0
A,
1.0
Description
FQP6N40C /
FQPF6N40C
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
®
’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Features
6.0
A,
400
V, R
DS(on)
=
1.0
(Max)
@V
GS
= 10 V,
I
D
=
3.0
A
• Low Gate Charge (Typ.
16
nC)
• Low Crss (Typ.
15
pF)
• 100% Avalanche Tested
D
!
G
!
G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQP6N40C
400
6
3.6
24
FQPF6N40C
6*
3.6 *
24 *
±
30
270
6
7.3
4.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
73
0.58
-55 to +150
300
38
0.3
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP6N40C
1.71
0.5
62.5
FQPF6N40C
3.31
--
62.5
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FQP6N40C / FQPF6N40C Rev.
C0

FQPF6N40CF Related Products

FQPF6N40CF FQPF6N40CT FQPF6N40C
Description MOSFET N-CH 400V 6A TO-220F MOSFET N-CH 400V 6A TO-220F MOSFET N-CH 400V 6A TO-220F
FET type N channel N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 400V 400V 400V
Current - Continuous Drain (Id) at 25°C 6A(Tc) 6A(Tc) 6A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V 10V 10V
Rds On (maximum value) when different Id, Vgs 1 ohm @ 3A, 10V 1 ohm @ 3A, 10V 1 ohm @ 3A, 10V
Vgs (th) (maximum value) when different Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 20nC @ 10V 20nC @ 10V 20nC @ 10V
Vgs (maximum value) ±30V ±30V ±30V
Input capacitance (Ciss) at different Vds (maximum value) 625pF @ 25V 625pF @ 25V 625pF @ 25V
Power dissipation (maximum) 38W(Tc) 38W(Tc) 38W(Tc)
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type Through hole Through hole Through hole
Supplier device packaging TO-220F TO-220F TO-220F
Package/casing TO-220-3 whole package TO-220-3 whole package TO-220-3 whole package
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