FDD8782/FDU8782 N-Channel PowerTrench
®
MOSFET
March 2015
FDD8782/FDU8782
N-Channel PowerTrench
®
MOSFET
25V, 35A, 11mΩ
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Features
Max r
DS(on)
=
11.0mΩ at V
GS
= 10V, I
D
= 35A
Max r
DS(on)
=
14.0mΩ at V
GS
= 4.5V, I
D
= 35A
Low gate charge: Q
g(10)
= 18nC(Typ), V
GS
= 10V
Low gate resistance
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
Avalanche rated and 100% tested
RoHS Compliant
D
G
D
G D S
I-PAK
(TO-251AA)
S
Short Lead I-PAK
G
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
-Continuous (Die Limited)
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
(Note 1)
(Note 2)
Parameter
Ratings
25
±20
35
54
321
72
50
-55 to 175
mJ
W
°C
A
Units
V
V
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in
2
copper pad area
3.0
100
52
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDD8782
FDU8782
FDU8782
Device
FDD8782
FDU8782
FDU8782_F071
Package
TO-252AA
TO-251AA
TO-251AA
1
Reel Size
13’’
N/A(Tube)
N/A(Tube)
Tape Width
16mm
N/A
N/A
Quantity
2500 units
75 units
75 units
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©2009 Fairchild Semiconductor Corporation
FDD8782/FDU8782 Rev. 1.2
FDD8782/FDU8782 N-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
ΔB
VDSS
ΔT
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250μA, V
GS
= 0V
I
D
= 250μA, referenced to
25°C
V
DS
= 20V,
V
GS
= 0V
V
GS
= ±20V
T
J
= 150°C
25
14.3
1
250
±100
V
mV/°C
μA
nA
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
r
DS(on)
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250μA
I
D
= 250μA, referenced to
25°C
V
GS
= 10V, I
D
= 35A
Drain to Source On Resistance
V
GS
= 4.5V, I
D
= 35A
V
GS
= 10V, I
D
= 35A
T
J
= 175°C
1.2
1.7
-6.5
8.5
11.0
12.1
11.0
14.0
18.0
mΩ
2.5
V
mV/°C
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 13V, V
GS
= 0V,
f = 1MHz
f = 1MHz
920
230
160
1.4
1220
310
240
pF
pF
pF
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
DD
= 13V
I
D
= 35A
I
g
= 1.0mA
V
DD
= 13V, I
D
= 35A
V
GS
= 10V, R
GS
= 9Ω
7
9
22
14
18
9.4
3.1
4.0
14
18
36
25
25
13
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 35A
V
GS
= 0V, I
S
= 15A
I
F
= 35A, di/dt = 100A/μs
I
F
= 35A, di/dt = 100A/μs
0.96
0.86
25
17
1.25
1.2
38
26
V
ns
nC
Notes:
1:
Pulse time < 300us,Duty cycle = 2%.
2:
Starting T
J
= 25
o
C, L = 1.0mH, I
AS
= 12A ,V
DD
= 23V, V
GS
= 10V.
FDD8782/FDU8782 Rev. 1.2
2
www.fairchildsemi.com
FDD8782/FDU8782 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
V
GS
= 10V
60
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
70
7
6
5
4
3
2
1
0
0
10
V
GS
= 4.5V
V
GS
= 10V
V
GS
= 3V
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
50
40
30
20
10
0
0
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 3V
1
2
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
20
30
40
50
I
D
, DRAIN CURRENT(A)
60
70
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
40
r
DS(on)
, ON-RESISTANCE
(
m
Ω
)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
I
D
= 35A
V
GS
= 10V
I
D
= 15A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
30
20
T
J
= 175
o
C
10
T
J
= 25
o
C
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE
(
o
C
)
200
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On Resistance vs Junction
Temperature
70
I
D
, DRAIN CURRENT (A)
60
50
40
30
20
10
0
1.0
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 175
o
C
Figure 4. On-Resistance vs Gate to Source
Voltage
100
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
10
1
0.1
0.01
1E-3
0.0
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
4.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
www.fairchildsemi.com
FDD8782/FDU8782 Rev. 1.2
FDD8782/FDU8782 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
V
GS
, GATE TO SOURCE VOLTAGE(V)
10
8
6
4
2
0
0
V
DD
= 8V
3000
f = 1MHz
V
GS
= 0V
CAPACITANCE (pF)
1000
C
oss
C
iss
V
DD
= 13V
V
DD
= 18V
C
rss
5
10
15
20
25
100
0.1
Q
g
, GATE CHARGE(nC)
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics
50
Figure 8. Capacitance vs Drain to Source Voltage
60
I
D
, DRAIN CURRENT (A)
I
AS
, AVALANCHE CURRENT
(
A
)
50
40
30
20
R
θ
JC
= 3.0 C/W
o
T
J
= 25
o
C
V
GS
= 10V
10
T
J
= 125
o
C
V
GS
= 4.5V
T
J
= 150
o
C
10
0
25
1
0.001
0.01
0.1
1
10
100
50
75
100
125
150
175
t
AV
, TIME IN AVALANCHE(ms)
T
C
, CASE TEMPERATURE
(
o
C
)
Figure 9. Unclamped Inductive Switching
Capability
500
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
7000
10us
P
(
PK
)
, PEAK TRANSIENT POWER (W)
V
GS
= 10V
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175
–
T
C
----------------------
-
150
100
I
D
, DRAIN CURRENT (A)
100us
1000
10
LIMITED BY
PACKAGE
OPERATION IN THIS
AREA MAY BE
LIMITED BY
r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
C
=
25
o
C
1
1ms
10ms
DC
100
SINGLE PULSE
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
50
10
-5
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
,
PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
FDD8782/FDU8782 Rev. 1.2
4
www.fairchildsemi.com
FDD8782/FDU8782 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JC
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
0.01
SINGLE PULSE
1E-3
-5
10
10
-4
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
Figure 13. Transient Thermal Response Curve
FDD8782/FDU8782 Rev. 1.2
5
www.fairchildsemi.com
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